Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

2008 ◽  
Vol 93 (24) ◽  
pp. 243503 ◽  
Author(s):  
Xiaodong Yang ◽  
Srivatsan Parthasarathy ◽  
Yongke Sun ◽  
Andrew Koehler ◽  
Toshikazu Nishida ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Mechanisms ◽  
Insight Into

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

2001 ◽  
Vol 79 (25) ◽  
pp. 4246-4248 ◽  
Author(s):  
C. W. Leitz ◽  
M. T. Currie ◽  
M. L. Lee ◽  
Z.-Y. Cheng ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
P Type

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

2013 ◽  
Vol 103 (12) ◽  
pp. 123511 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Takafumi Kamimura ◽  
Man Hoi Wong ◽  
Daivasigamani Krishnamurthy ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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