Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers

2001 ◽  
Vol 78 (7) ◽  
pp. 862-864 ◽  
Author(s):  
W. Heiss ◽  
T. Schwarzl ◽  
G. Springholz ◽  
K. Biermann ◽  
K. Reimann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Quantum Well Lasers ◽  
Cavity Surface ◽  
Mid Infrared ◽  
Vertical Cavity Surface ◽  
Vertical Cavity

Room-temperature mid-infrared interband cascade vertical-cavity surface-emitting lasers

2016 ◽  
Vol 109 (15) ◽  
pp. 151108 ◽  
Author(s):  
W. W. Bewley ◽  
C. L. Canedy ◽  
C. S. Kim ◽  
C. D. Merritt ◽  
M. V. Warren ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

IV-VI Compound Semiconductor Mid-Infrared Vertical Cavity Surface Emitting Lasers Grown by MBE

1999 ◽  
Vol 607 ◽  
Author(s):  
Z. Shi ◽  
G. Xu ◽  
P.J. McCann ◽  
X. M. Fang ◽  
N. Dai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Optical Pumping ◽  
Active Material ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractMid-infrared vertical cavity surface emitting lasers (VCSELs) using PbSe as the active material and broadband high reflectivity Pb1−xSrxSe/BaF 2 distributed Bragg reflectors (DBR) as bottom and top mirrors were grown by molecular beam epitaxy. By pulsed optical pumping, this first IV-VI semiconductor VCSEL operated up to 290K at a wavelength of 4.5 µm. Further optimization of such VCSELs could lead to room temperature continuos wave operation.

Simulation of mid-infrared HgTe/CdTe quantum-well vertical-cavity surface-emitting lasers

1998 ◽  
Vol 83 (8) ◽  
pp. 4286-4291 ◽  
Author(s):  
I. Vurgaftman ◽  
J. R. Meyer ◽  
J. M. Dell ◽  
T. A. Fisher ◽  
L. Faraone
Keyword(s):  
Quantum Well ◽  
Cavity Surface ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

RELIABILITY OF PROTON IMPLANTED VERTICAL CAVITY SURFACE EMITTING LASERS

1994 ◽  
Vol 05 (04) ◽  
pp. 731-764 ◽  
Author(s):  
CHANG-CHERNG WU ◽  
KUOCHOU TAI ◽  
KAI-FENG HUANG ◽  
CHUN-YEN CHANG
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Implantation Technique ◽  
Cavity Surface ◽  
Time To Failure ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Reliable gain-guided vertical cavity surface emitting lasers were fabricated by the proton implantation technique at the 0.85 and 0.98 μm emission wavelengths. The device failure mode was found to be mainly the gradual degradation mode, manifested in the gradual reduction of output power and gradual increase of diode series resistance. Continuous wave operation of the 0.85 μm GaAs/AlGaAs quantum well lasers for 12,000 hours was seen at 25 and 50°C at 15 mA (~ 4 Ith). Extrapolation from accelerated aging test performed at higher temperatures yields a 25°C mean-time-to-failure of 1−2.5×105 hours at 15 mA. For the 0.98 μm InGaAs/GaAs strained quantum well lasers, a much slower degradation rate at high temperatures was seen in the 0.85 μm lasers. Secondary ion mass spectrometry revealed that the implant proton depth is short enough that the active region of these lasers is free from proton bombardment. The near field emission pattern of the aged lasers by cathodo-luminescence and electro-luminescence microscopies did not contain dark spots and line features.

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