scholarly journals Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

1994 ◽  
Vol 6 (3) ◽  
pp. 317-319 ◽  
Author(s):  
K. Uomi ◽  
S.J.B. Yoo ◽  
A. Scherer ◽  
R. Bhat ◽  
N.C. Andreadakis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Active Layer ◽  
Room Temperature ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Multi Quantum Well

scholarly journals A Compact High-Efficient Equivalent Circuit Model of Multi-Quantum-Well Vertical-Cavity Surface-Emitting Lasers for High-Speed Interconnects

2020 ◽  
Vol 10 (11) ◽  
pp. 3865
Author(s):  
Shanglin Li ◽  
Mohammadreza Sanadgol Nezami ◽  
David Rolston ◽  
Odile Liboiron-Ladouceur
Keyword(s):  
Quantum Well ◽  
Equivalent Circuit ◽  
High Speed ◽  
Equivalent Circuit Model ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Multi Quantum Well

Due to their low power consumption, high modulation speed, and low cost, vertical-cavity surface-emitting lasers (VCSEL) dominate short-reach data communications as the light source. In this paper, we propose a compact equivalent circuit model with noise effects for high-speed multi-quantum-well (MQW) VCSELs. The model comprehensively accounts for the carrier and photons dynamisms of a MQW structure, which includes separate confinement heterostructure (SCH) layers, barrier (B) layers, and quantum well (QW) layers. The proposed model is generalized to various VCSEL designs and accommodates a flexible number of quantum wells. Experimental validation of the model is performed at 25 Gb/s with a self-wire-bonded 850 nm VCSEL.

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