Continuous wave optically pumped lead-salt mid-infrared quantum-well vertical-cavity surface-emitting lasers

2003 ◽  
Vol 83 (25) ◽  
pp. 5133-5135 ◽  
Author(s):  
F. Zhao ◽  
H. Wu ◽  
A. Majumdar ◽  
Z. Shi
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Lead Salt ◽  
Cavity Surface ◽  
Optically Pumped ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Mid-infrared vertical-cavity surface-emitting lasers based on lead salt/BaF 2 Bragg mirrors

2008 ◽  
Author(s):  
Martin Eibelhuber ◽  
Thomas Schwarzl ◽  
Andreas Winter ◽  
Harald Pascher ◽  
Wolfgang Heiss ◽  
...  
Keyword(s):  
Lead Salt ◽  
Cavity Surface ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Simulation of mid-infrared HgTe/CdTe quantum-well vertical-cavity surface-emitting lasers

1998 ◽  
Vol 83 (8) ◽  
pp. 4286-4291 ◽  
Author(s):  
I. Vurgaftman ◽  
J. R. Meyer ◽  
J. M. Dell ◽  
T. A. Fisher ◽  
L. Faraone
Keyword(s):  
Quantum Well ◽  
Cavity Surface ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

RELIABILITY OF PROTON IMPLANTED VERTICAL CAVITY SURFACE EMITTING LASERS

1994 ◽  
Vol 05 (04) ◽  
pp. 731-764 ◽  
Author(s):  
CHANG-CHERNG WU ◽  
KUOCHOU TAI ◽  
KAI-FENG HUANG ◽  
CHUN-YEN CHANG
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Implantation Technique ◽  
Cavity Surface ◽  
Time To Failure ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Reliable gain-guided vertical cavity surface emitting lasers were fabricated by the proton implantation technique at the 0.85 and 0.98 μm emission wavelengths. The device failure mode was found to be mainly the gradual degradation mode, manifested in the gradual reduction of output power and gradual increase of diode series resistance. Continuous wave operation of the 0.85 μm GaAs/AlGaAs quantum well lasers for 12,000 hours was seen at 25 and 50°C at 15 mA (~ 4 Ith). Extrapolation from accelerated aging test performed at higher temperatures yields a 25°C mean-time-to-failure of 1−2.5×105 hours at 15 mA. For the 0.98 μm InGaAs/GaAs strained quantum well lasers, a much slower degradation rate at high temperatures was seen in the 0.85 μm lasers. Secondary ion mass spectrometry revealed that the implant proton depth is short enough that the active region of these lasers is free from proton bombardment. The near field emission pattern of the aged lasers by cathodo-luminescence and electro-luminescence microscopies did not contain dark spots and line features.

Optically Pumped Quasi-Continuous Wave Violet Vertical Cavity Surface Emitting Lasers

2000 ◽  
Vol 180 (1) ◽  
pp. 387-389
Author(s):  
Y.-K. Song ◽  
H. Zhou ◽  
M. Diagne ◽  
A.V. Nurmikko ◽  
R.P. Schneider ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Cavity Surface ◽  
Optically Pumped ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

2013 ◽  
Vol 61 (3) ◽  
pp. 737-744 ◽  
Author(s):  
Ł. Piskorski ◽  
R.P. Sarzała
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Threshold Current ◽  
Cavity Surface ◽  
Sensing Applications ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Alternative Choice ◽  
Vertical Cavity

Abstract In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138- Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.

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