IV-VI Compound Semiconductor Mid-Infrared Vertical Cavity Surface Emitting Lasers Grown by MBE

1999 ◽  
Vol 607 ◽  
Author(s):  
Z. Shi ◽  
G. Xu ◽  
P.J. McCann ◽  
X. M. Fang ◽  
N. Dai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Optical Pumping ◽  
Active Material ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractMid-infrared vertical cavity surface emitting lasers (VCSELs) using PbSe as the active material and broadband high reflectivity Pb1−xSrxSe/BaF 2 distributed Bragg reflectors (DBR) as bottom and top mirrors were grown by molecular beam epitaxy. By pulsed optical pumping, this first IV-VI semiconductor VCSEL operated up to 290K at a wavelength of 4.5 µm. Further optimization of such VCSELs could lead to room temperature continuos wave operation.

Room-temperature mid-infrared interband cascade vertical-cavity surface-emitting lasers

2016 ◽  
Vol 109 (15) ◽  
pp. 151108 ◽  
Author(s):  
W. W. Bewley ◽  
C. L. Canedy ◽  
C. S. Kim ◽  
C. D. Merritt ◽  
M. V. Warren ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Mid Infrared ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals GaN-based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors

2019 ◽  
Vol 9 (4) ◽  
pp. 733 ◽  
Author(s):  
Tatsushi Hamaguchi ◽  
Hiroshi Nakajima ◽  
Noriyuki Fuutagawa
Keyword(s):  
Continuous Wave ◽  
Epitaxial Lateral Overgrowth ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Practical Applications ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

This paper reviews past research and the current state-of-the-art concerning gallium nitride-based vertical-cavity surface-emitting lasers (GaN-VCSELs) incorporating distributed Bragg reflectors (DBRs). This paper reviews structures developed during the early stages of research into these devices, covering both major categories of GaN-based VCSELs: hybrid-DBR and all-dielectric-DBR. Although both types exhibited satisfactory performance during continuous-wave (CW) operation in conjunction with current injection as early as 2008, GaN-VCSELs have not yet been mass produced for several reasons. These include the difficulty in controlling the thicknesses of nitride semiconductor layers in hybrid-DBR type devices and issues related to the cavity dimensions in all-dielectric-DBR units. Two novel all-dielectric GaN-based VCSEL concepts based on different structures are examined herein. In one, the device incorporates dielectric DBRs at both ends of the cavity, with one DBR embedded in n-type GaN grown using the epitaxial lateral overgrowth technique. The other concept incorporates a curved mirror fabricated on (000-1) GaN. Both designs are intended to mitigate challenges regarding industrial-scale processing that are related to the difficulty in controlling the cavity length, which have thus far prevented practical applications of all-dielectric GaN-based VCSELs.

scholarly journals Influence of Various Bottom DBR Designs on the Thermal Properties of Blue Semiconductor-Metal Subwavelength-Grating VCSELs

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3235 ◽  
Author(s):  
Robert P. Sarzała ◽  
Łukasz Piskorski ◽  
Tomasz Czyszanowski ◽  
Maciej Dems
Keyword(s):  
Heat Dissipation ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Small Aperture ◽  
Subwavelength Grating ◽  
Monolithically Integrated ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

In this paper, we consider several designs for nitride-based vertical-cavity surface-emitting lasers (VCSELs) with a top semiconductor-metal subwavelength grating (SMSG) as the facet mirror. The constructions of the bottom distributed Bragg reflectors (DBRs) used in the VCSEL designs were inspired by devices demonstrated recently by several research groups. A multiparameter numerical analysis was performed, based on self-consistent thermal and electrical simulations. The results show that, in the case of small aperture VCSEL designs, dielectric-based DBRs with metallic or GaN channels enable equally efficient heat dissipation to designs with monolithically integrated DBRs. In the case of broad aperture designs enabled by SMSGs, monolithically integrated DBRs provide much more efficient heat dissipation in comparison to all other considered designs.

Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers

2014 ◽  
Vol 104 (25) ◽  
pp. 251116 ◽  
Author(s):  
Wen-Jie Liu ◽  
Xiao-Long Hu ◽  
Lei -Ying Ying ◽  
Jiang-Yong Zhang ◽  
Bao-Ping Zhang
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Lasing on higher-azimuthal-order modes in vertical cavity surface emitting lasers at room temperature

2009 ◽  
Vol 97 (3) ◽  
pp. 619-623 ◽  
Author(s):  
C.-J. Cheng ◽  
Y. Y. Lin ◽  
C.-Y. Chen ◽  
T.-D. Lee ◽  
R.-K. Lee
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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