Ultrashort dynamic response of vertical cavity surface-emitting quantum well lasers

1996 ◽  
Author(s):  
Frank Jahnke ◽  
Hans Christian Schneider ◽  
Stephan W. Koch
Keyword(s):  
Dynamic Response ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Vertical Cavity

Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers

2001 ◽  
Vol 78 (7) ◽  
pp. 862-864 ◽  
Author(s):  
W. Heiss ◽  
T. Schwarzl ◽  
G. Springholz ◽  
K. Biermann ◽  
K. Reimann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Quantum Well Lasers ◽  
Cavity Surface ◽  
Mid Infrared ◽  
Vertical Cavity Surface ◽  
Vertical Cavity

RELIABILITY OF PROTON IMPLANTED VERTICAL CAVITY SURFACE EMITTING LASERS

1994 ◽  
Vol 05 (04) ◽  
pp. 731-764 ◽  
Author(s):  
CHANG-CHERNG WU ◽  
KUOCHOU TAI ◽  
KAI-FENG HUANG ◽  
CHUN-YEN CHANG
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Implantation Technique ◽  
Cavity Surface ◽  
Time To Failure ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Reliable gain-guided vertical cavity surface emitting lasers were fabricated by the proton implantation technique at the 0.85 and 0.98 μm emission wavelengths. The device failure mode was found to be mainly the gradual degradation mode, manifested in the gradual reduction of output power and gradual increase of diode series resistance. Continuous wave operation of the 0.85 μm GaAs/AlGaAs quantum well lasers for 12,000 hours was seen at 25 and 50°C at 15 mA (~ 4 Ith). Extrapolation from accelerated aging test performed at higher temperatures yields a 25°C mean-time-to-failure of 1−2.5×105 hours at 15 mA. For the 0.98 μm InGaAs/GaAs strained quantum well lasers, a much slower degradation rate at high temperatures was seen in the 0.85 μm lasers. Secondary ion mass spectrometry revealed that the implant proton depth is short enough that the active region of these lasers is free from proton bombardment. The near field emission pattern of the aged lasers by cathodo-luminescence and electro-luminescence microscopies did not contain dark spots and line features.

GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes

1990 ◽  
Vol 2 (7) ◽  
pp. 456-458 ◽  
Author(s):  
Y.H. Wang ◽  
K. Tai ◽  
J.D. Wynn ◽  
M. Hong ◽  
R.J. Fischer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Cavity Surface ◽  
Multiple Quantum ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

2008 ◽  
Vol 16 (1) ◽  
Author(s):  
Ł. Piskorski ◽  
R. Sarzała ◽  
W. Nakwaski
Keyword(s):  
Quantum Well ◽  
Elevated Temperatures ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Cavity Surface ◽  
Efficient Operation ◽  
Consistent Model ◽  
Vertical Cavity Surface ◽  
Band Absorption ◽  
Vertical Cavity

AbstractThe possibility of application of the 650-nm oxide-confined GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers (VCSELs) at elevated temperatures as sources of the carrier 650-nm wave in the fibre optical communication using POFs has been investigated with the aid of the comprehensive self-consistent model. An increase in the VCSEL threshold current at higher temperatures has been found to be mostly associated with both the carrier leakage from the valley of the Ga0.43In0.57P quantum-well material to the X-valley of the (Al0.67Ga0.33)0.52In0.48P barriers and the band-to-band absorption within the Ga0.52In0.48P layer of the band-gap comparable with the energy of emitted radiation. Nevertheless, the AlGaInP VCSELs exhibit encouraging thermal behaviour with the characteristic temperature T0 equal to as much as 134 K for the active-region temperatures up to 357 K. For the 5-μm devices, the maximal achievable output has been determined to decrease from a quite high value of 1.0 mW for 293 K to 0.6 mW for 320 K and to still high 0.33 mW for 340 K. However, an efficient operation of the above VCSEL at elevated temperatures requires still some structure modifications leading to a reduction of both the above effects, the electron leakage from the valley and the band-to-band absorption within GaInP layers.

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