The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing
2007 ◽
Vol 54
(9)
◽
pp. 2546-2550
◽
Keyword(s):
2017 ◽
Vol 32
(2)
◽
pp. 91-96
2001 ◽
Vol 45
(2)
◽
pp. 365-368
◽
Keyword(s):
2015 ◽
Vol 15
(1)
◽
pp. 82-85
◽
Keyword(s):
1995 ◽
Vol 42
(2)
◽
pp. 101-105
◽
2013 ◽
Vol 52
(10S)
◽
pp. 10MA01
◽
Keyword(s):
Keyword(s):
Keyword(s):
2010 ◽
Vol 49
(3)
◽
pp. 03CA06
◽
Keyword(s):