Interference-induced blockage of direct tunneling current in metal–insulator–semiconductor structure

J. M. Mohaidat; Riyad N. Ahmad-Bitar

doi:10.1063/1.126413

Interference-induced blockage of direct tunneling current in metal–insulator–semiconductor structure

Applied Physics Letters ◽

10.1063/1.126413 ◽

2000 ◽

Vol 76 (18) ◽

pp. 2577-2579

Author(s):

J. M. Mohaidat ◽

Riyad N. Ahmad-Bitar

Keyword(s):

Tunneling Current ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Direct Tunneling ◽

Direct Tunneling Current

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Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary

Journal of Applied Physics ◽

10.1063/1.2202196 ◽

2006 ◽

Vol 99 (10) ◽

pp. 104501 ◽

Cited By ~ 6

Author(s):

E. Nadimi ◽

C. Radehaus ◽

E. P. Nakhmedov ◽

K. Wieczorek

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Open Boundary ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Metal Oxide Semiconductor Structure

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Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

Thin Solid Films ◽

10.1016/0040-6090(89)90001-1 ◽

1989 ◽

Vol 168 (2) ◽

pp. 157-163 ◽

Cited By ~ 3

Author(s):

B. Ullrich ◽

F. Kuchar ◽

R. Meisels ◽

F. Olcaytug ◽

A. Jachimowicz

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

P Type

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Investigations of metal-insulator-semiconductor structure in-homogeneities using a small-size mercury probe

Microelectronics Reliability ◽

10.1016/0026-2714(85)90335-x ◽

1985 ◽

Vol 25 (3) ◽

pp. 593

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.343099 ◽

1989 ◽

Vol 65 (2) ◽

pp. 651-661 ◽

Cited By ~ 2

Author(s):

S. Mitsutsuka ◽

T. Okamoto ◽

T. Niitsuma ◽

S. Minagawa

Keyword(s):

Acoustic Waves ◽

Surface Acoustic Waves ◽

Semiconductor Structure ◽

Propagation Loss ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Study of direct tunneling current oscillations in ultrathin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.1861153 ◽

2005 ◽

Vol 97 (6) ◽

pp. 064107 ◽

Cited By ~ 4

Author(s):

E. P. Nakhmedov ◽

C. Radehaus ◽

K. Wieczorek

Keyword(s):

Gate Dielectrics ◽

Tunneling Current ◽

Direct Tunneling ◽

Current Oscillations ◽

Direct Tunneling Current

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Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-018-9104-2 ◽

2018 ◽

Vol 29 (18) ◽

pp. 15496-15501

Author(s):

Hector Uribe-Vargas ◽

Joel Molina-Reyes

Keyword(s):

Tunneling Current ◽

Atomic Layer ◽

Parameter Extraction ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Tunneling

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InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques

Solid State Communications ◽

10.1016/0038-1098(87)90748-4 ◽

1987 ◽

Vol 64 (4) ◽

pp. 411-416 ◽

Cited By ~ 5

Author(s):

P. Bogdanski ◽

F. Murray ◽

J.P. Piel

Keyword(s):

Semiconductor Structure ◽

Structure Parameters ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

Journal of Applied Physics ◽

10.1063/1.369381 ◽

1999 ◽

Vol 85 (10) ◽

pp. 7471-7476 ◽

Cited By ~ 13

Author(s):

Kinya Ashikaga ◽

Toshio Ito

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Structure ◽

Memory Retention ◽

Simple Metal ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Retention Characteristics

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Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.05.119 ◽

2017 ◽

Vol 718 ◽

pp. 104-111 ◽

Cited By ~ 6

Author(s):

M. Chandra Sekhar ◽

Nallabala Nanda Kumar Reddy ◽

Harish Sharma Akkera ◽

B. Purusottam Reddy ◽

V. Rajendar ◽

...

Keyword(s):

Electronic Properties ◽

Oxide Layer ◽

Layer Thickness ◽

Annealing Temperature ◽

Semiconductor Structure ◽

Oxide Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Structural And Electronic Properties

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