Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

1998 ◽  
Vol 73 (18) ◽  
pp. 2681-2683 ◽  
Author(s):  
J. Collet ◽  
D. Vuillaume
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Self Assembled Monolayer ◽  
Effect Transistor ◽  
Self Assembled

scholarly journals Built-in water resistance in organic transistors modified with self-assembled monolayers

RSC Advances ◽  
2014 ◽  
Vol 4 (85) ◽  
pp. 45082-45087 ◽  
Author(s):  
Boseok Kang ◽  
Wi Hyoung Lee ◽  
Hyun Ho Choi ◽  
Yeong Don Park ◽  
Kilwon Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Water Resistance ◽  
Gate Dielectric ◽  
Self Assembled Monolayers ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Assembled Monolayers ◽  
Effect Transistor ◽  
Self Assembled

We systematically investigated the effects of a self-assembled monolayer (SAM), prepared on the gate dielectric, on the performances of bottom-gate organic field-effect transistor (OFET) devices under various humid environments.

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor
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