Low-temperature anodic oxidation of silicon using a wave resonance plasma source

1999 ◽  
Vol 75 (5) ◽  
pp. 725-727 ◽  
Author(s):  
S. Uchikoga ◽  
D. F. Lai ◽  
J. Robertson ◽  
W. I. Milne ◽  
N. Hatzopoulos ◽  
...  
Keyword(s):  
Low Temperature ◽  
Anodic Oxidation ◽  
Plasma Source ◽  
Wave Resonance ◽  
Resonance Plasma

High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

1999 ◽  
Vol 337 (1-2) ◽  
pp. 71-73 ◽  
Author(s):  
N.A. Morrison ◽  
S.E. Rodil ◽  
A.C. Ferrari ◽  
J. Robertson ◽  
W.I. Milne
Keyword(s):  
Plasma Source ◽  
Electron Cyclotron ◽  
High Rate ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

High Rate Deposition of Ta-C:H Using an Electron Cyclotron Wave Resonance Plasma Source

1997 ◽  
Vol 498 ◽  
Author(s):  
N. A. Morrison ◽  
S. Muhl ◽  
S. E. Rodil ◽  
W. I. Milne ◽  
J. Robertson ◽  
...  
Keyword(s):  
Friction Coefficient ◽  
Plasma Source ◽  
Tribological Performance ◽  
Electron Cyclotron ◽  
High Rate ◽  
Ion Energy ◽  
Tetrahedral Amorphous Carbon ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

ABSTRACTA compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 A/mm and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.

Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

2000 ◽  
Vol 9 (3-6) ◽  
pp. 524-529 ◽  
Author(s):  
S. Rodil ◽  
N.A. Morrison ◽  
W.I. Milne ◽  
J. Robertson ◽  
V. Stolojan ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

Ion energy dependence of film properties for diamond-like carbon prepared with plasma-assisted deposition

2001 ◽  
Vol 16 (11) ◽  
pp. 3034-3037 ◽  
Author(s):  
Cao Zexian
Keyword(s):  
Carbon Films ◽  
Root Mean Square Roughness ◽  
Film Properties ◽  
Ion Energy ◽  
Atomic Force ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
20 Nm ◽  
Maximum Content ◽  
Resonance Plasma

Hydrogen-free diamondlike carbon films were prepared on Si(100) with electron cyclotron wave-resonance plasma, which serves to sputter the graphite target and to simultaneously bombard the growing surface. Direct penetration of postionized carbon atoms (up to 140 eV) in addition to the momentum transfer from Ar plasma facilities the formation of the Ta–C structure. Surface morphology, mechanical, and optical properties of the deposits were examined with respect to the ion energy. Atomic force microscope images revealed island morphology in deposits with a typical root-mean-square roughness of 20 nm. A maximum content of about 70% for the fourfold-bonded structure was estimated from the Raman profiles, giving rise to a micro hardness of 60 ± 5 GPa.

Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 162 ◽  
Author(s):  
Z. Sitar ◽  
M. J. Paisley ◽  
B. Yan ◽  
R. F. Davis
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Structural Defects ◽  
Effusion Cell ◽  
Gas Source ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Gas Source Mbe ◽  
Inversion Domain Boundaries ◽  
Resonance Plasma

ABSTRACTSingle crystal cubic or hexagonal GaN thin films have been grown on various substrates, using a modified gas source MBE technique. A standard effusion cell was employed for the evaporation of gallium. A compact electron cyclotron resonance plasma source was used to activate the nitrogen prior to deposition. The films were examined by transmission electron microscopy. The major defects in the wurtzite GaN were double positioning boundaries, inversion domain boundaries, and dislocations. The zinc-blende GaN showed microtwins, stacking faults, and dislocations. The connection between the observed structural defects and the poor electrical properties of GaN is noted.

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