Ion energy dependence of film properties for diamond-like carbon prepared with plasma-assisted deposition

2001 ◽  
Vol 16 (11) ◽  
pp. 3034-3037 ◽  
Author(s):  
Cao Zexian
Keyword(s):  
Carbon Films ◽  
Root Mean Square Roughness ◽  
Film Properties ◽  
Ion Energy ◽  
Atomic Force ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
20 Nm ◽  
Maximum Content ◽  
Resonance Plasma

Hydrogen-free diamondlike carbon films were prepared on Si(100) with electron cyclotron wave-resonance plasma, which serves to sputter the graphite target and to simultaneously bombard the growing surface. Direct penetration of postionized carbon atoms (up to 140 eV) in addition to the momentum transfer from Ar plasma facilities the formation of the Ta–C structure. Surface morphology, mechanical, and optical properties of the deposits were examined with respect to the ion energy. Atomic force microscope images revealed island morphology in deposits with a typical root-mean-square roughness of 20 nm. A maximum content of about 70% for the fourfold-bonded structure was estimated from the Raman profiles, giving rise to a micro hardness of 60 ± 5 GPa.

High Rate Deposition of Ta-C:H Using an Electron Cyclotron Wave Resonance Plasma Source

1997 ◽  
Vol 498 ◽  
Author(s):  
N. A. Morrison ◽  
S. Muhl ◽  
S. E. Rodil ◽  
W. I. Milne ◽  
J. Robertson ◽  
...  
Keyword(s):  
Friction Coefficient ◽  
Plasma Source ◽  
Tribological Performance ◽  
Electron Cyclotron ◽  
High Rate ◽  
Ion Energy ◽  
Tetrahedral Amorphous Carbon ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

ABSTRACTA compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 A/mm and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its bonding, stress and friction coefficient. The results indicated that the ta-C:H produced using this source fulfills the necessary requirements for applications requiring enhanced tribological performance.

Optical Band Gap of Diamond-Like Carbon Films as a Function of RF Substrate Bias

1989 ◽  
Vol 162 ◽  
Author(s):  
P. W. Pastel ◽  
W. J. Varhue
Keyword(s):  
Band Gap ◽  
Cyclotron Resonance ◽  
Optical Band Gap ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Substrate Bias ◽  
Ion Energy ◽  
Resonance Plasma

ABSTRACTDiamond-like carbon films have been deposited with a low temperature 2.45 GHz electron cyclotron resonance plasma enhanced chemical vapor deposition system. The bombarding ion energy was independently controlled with a RF bias to the substrate. The production rate of reactant species and the impinging ion energy are decoupled with this system. The optical band gap decreased from 2.7 to 1.2 eV as substrate bias was increased from 0 to -140 V.

High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source

1999 ◽  
Vol 337 (1-2) ◽  
pp. 71-73 ◽  
Author(s):  
N.A. Morrison ◽  
S.E. Rodil ◽  
A.C. Ferrari ◽  
J. Robertson ◽  
W.I. Milne
Keyword(s):  
Plasma Source ◽  
Electron Cyclotron ◽  
High Rate ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

Nanoscale Indentation Hardness and Wear Characterization of Hydrogenated Carbon Thin Films

1996 ◽  
Vol 118 (2) ◽  
pp. 431-438 ◽  
Author(s):  
B. Wei ◽  
K. Komvopoulos
Keyword(s):  
Thin Films ◽  
Wear Rate ◽  
Film Thickness ◽  
Critical Load ◽  
Carbon Films ◽  
Indentation Hardness ◽  
Severe Wear ◽  
Atomic Force ◽  
Carbon Thin Films ◽  
20 Nm

An experimental investigation of the surface topography, nanoindentation hardness, and nanowear characteristics of carbon thin films was conducted using atomic force and point contact microscopy. Hydrogenated carbon films of thickness 5, 10, and 25 nm were synthesized using a sputtering technique. Atomic force microscopy images obtained with silicon nitride tips of nominal radius less than 20 nm demonstrated that the carbon films possessed very similar surface topographies and root-mean-square roughness values in the range of 0.7–1.1 nm. Nanoindentation and nanowear experiments performed with diamond tips of radius equal to about 20 nm revealed a significant enhancement of the hardness and wear resistance with increasing film thickness. High-resolution surface imaging indicated that plastic flow was the dominant deformation process in the nanoindentation experiments. The carbon wear behavior was strongly influenced by variations in the film thickness, normal load, and number of scanning cycles. For a given film thickness, increasing the load caused the transition from an atomic-scale wear process, characterized by asperity deformation and fracture, to severe wear consisting of plowing and cutting of the carbon films. Both the critical load and scanning time for severe wear increased with film thickness. Below the critical load, the wear rate decreased with further scanning and the amount of material worn off was negligibly small, while above the critical load the wear rate increased significantly resulting in the rapid removal of carbon. The observed behavior and trends are in good qualitative agreement with the results of other experimental and contact mechanics studies.

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

2012 ◽  
Vol 112 (9) ◽  
pp. 093305 ◽  
Author(s):  
Vitezslav Stranak ◽  
Ann-Pierra Herrendorf ◽  
Steffen Drache ◽  
Martin Cada ◽  
Zdenek Hubicka ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Plasma Diagnostics ◽  
Low Pressure ◽  
Electron Cyclotron ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma

Nanoscale Indentation Hardness and Wear Characterization of Hydrogenated Carbon Thin Films

1995 ◽  
Vol 117 (4) ◽  
pp. 594-601 ◽  
Author(s):  
B. Wei ◽  
K. Komvopoulos
Keyword(s):  
Thin Films ◽  
Wear Rate ◽  
Film Thickness ◽  
Critical Load ◽  
Carbon Films ◽  
Indentation Hardness ◽  
Severe Wear ◽  
Atomic Force ◽  
Carbon Thin Films ◽  
20 Nm

An experimental investigation of the surface topography, nanoindentation hardness, and nanowear characteristics of carbon thin films was conducted using atomic force and point contact microscopy. Hydrogenated carbon films of thickness 5, 10, and 25 nm were synthesized using a sputtering technique. Atomic force microscopy images obtained with silicon nitride tips of nominal radius less than 20 nm demonstrated that the carbon films possessed very similar surface topographies and root-mean-square roughness values in the range of 0.7–1.1 nm. Nanoindentation and nanowear experiments performed with diamond tips of radius equal to about 20 nm revealed a significant enhancement of the hardness and wear resistance with increasing film thickness. High-resolution surface imaging indicated that plastic flow was the dominant deformation process in the nanoindentation experiments. The carbon wear behavior was strongly influenced by variations in the film thickness, normal load, and number of scanning cycles. For a given film thickness, increasing the load caused the transition from an atomic-scale wear process, characterized by asperity deformation and fracture, to severe wear consisting of plowing and cutting of the carbon films. Both the critical load and scanning time for severe wear increased with film thickness. Below the critical load, the wear rate decreased with further scanning and the amount of material worn off was negligibly small, while above the critical load the wear rate increased significantly resulting in the rapid removal of carbon. The observed behavior and trends are in good qualitative agreement with the results of other experimental and contact mechanics studies.

Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

2000 ◽  
Vol 9 (3-6) ◽  
pp. 524-529 ◽  
Author(s):  
S. Rodil ◽  
N.A. Morrison ◽  
W.I. Milne ◽  
J. Robertson ◽  
V. Stolojan ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
Resonance Plasma
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