Surface photovoltage analysis of copper in p-type silicon

1998 ◽  
Vol 72 (18) ◽  
pp. 2298-2300 ◽  
Author(s):  
Deepak A. Ramappa ◽  
Worth B. Henley
Keyword(s):  
Surface Photovoltage ◽  
Type Silicon ◽  
P Type

Measuring Diffusion Lengths in Epitaxial Silicon by Surface Photovoltage

1995 ◽  
Vol 386 ◽  
Author(s):  
John Lowell ◽  
Valerie Wenner ◽  
Damon Debusk
Keyword(s):  
Transition Metals ◽  
Optical Filters ◽  
Surface Photovoltage ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Optical Surface ◽  
Epitaxial Silicon ◽  
Type Silicon ◽  
P Type ◽  
And Diffusion

ABSTRACTIn CMOS, the use of epitaxial layers for prevention of latch-up in logic technologies is well-known and pervasive. One of the crucial parameters is the amount of metallic contamination due to transition metals such as Fe in the epi since this phenomena effects both device performance and quality. However, the ability to measure this parameter on product material is not generally available due to inherent problems with most known methods. The limitation of traditional surface photovoltage is that the deep optical penetration of over a hundred microns is well-beyond the depth of most epitaxial layers and does not accurately profile the epitaxial region [1]. In this paper we report on the application of optical surface photovoltage (SPV) using a set of ultra-shallow optical filters to both quantify and qualify as-grown epitaxial layers on CZ P-type silicon. We believe that a non-contact, SPV measurement of Fe concentration and diffusion lengths within an epitaxial region has not been previously reported.

Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Ronald E. Bell ◽  
Serguei Ostapenko ◽  
Jacek Lagowski
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Surface Photovoltage ◽  
Defect Engineering ◽  
Acceptor Reaction ◽  
Minority Carrier Diffusion Length ◽  
Enhanced Diffusion ◽  
Type Silicon ◽  
P Type

AbstractExperimental evidence is provided for ultrasound stimulated dissociation of metal-acceptor pairs in silicon, and also for enhanced diffusion of metal interstitials which may lead to enhanced pairing. The first effect is found dominant in Fe-doped p-type silicon where ultrasound causes low temperature dissociation of Fe-B pairs. This is in contrast to Cr-doped p-type silicon where ultrasound enhances the formation of Cr-B pairs due to enhanced diffusivity of Cr by as much as two orders of magnitude.In this study, the metal-acceptor reaction was monitored in situ via corresponding changes of the minority carrier diffusion length measured by non-contact surface photovoltage. Ultrasound-stimulated pair reaction can be utilized for metal diagnostics for the silicon IC industry. Thus, with ultrasound, Cr-B pairing can be reduced from months to hours, making possible the identification of Cr via pairing kinetics in a reasonable period of time.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type
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