Effect of Layer-by-Layer Electrostatic Assemblies on the Surface Potential and Current Voltage Characteristic of Metal−Insulator−Semiconductor Structures

Langmuir ◽  
2009 ◽  
Vol 25 (21) ◽  
pp. 12529-12534 ◽  
Author(s):  
D. A. Gorin ◽  
A. M. Yashchenok ◽  
A. O. Manturov ◽  
T. A. Kolesnikova ◽  
H. Möhwald
Keyword(s):  
Surface Potential ◽  
Voltage Characteristic ◽  
Layer By Layer ◽  
Current Voltage Characteristic ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Current Voltage

An analysis of field-induced hot-electron emission from metal-insulator microstructures on broad-area high-voltage electrodes

1986 ◽  
Vol 403 (1825) ◽  
pp. 285-311 ◽  
Keyword(s):  
Electron Emission ◽  
Voltage Characteristic ◽  
Spectral Shape ◽  
Hot Electron ◽  
Current Voltage Characteristic ◽  
Broad Area ◽  
Metal Insulator ◽  
Resolution Electron ◽  
Current Voltage ◽  
Vacuum Gap

High-resolution electron energy distribution measurements of individual microscopic sites have been used to develop a detailed theoretical model of the field-induced hot-electron emission mechanism responsible for pre-breakdown currents at vacuum-gap fields of 10-30 MV m -1 . The model, which is based on the formation of conducting channels in a metal-insulator-vacuum (m. i. v.) micro-emission régime, has provided experimentally verified quantitative relations for the current-voltage characteristic, spectral shape, and the field-dependence of the spectral full width at half maximum (f. w. h. m.) and shift.

Electrophysical Characteristics of Tantalum Oxide Structures

2020 ◽  
Vol 22 (8) ◽  
pp. 433-437
Author(s):  
V.S. Belov ◽  
◽  
Keyword(s):  
Tantalum Oxide ◽  
Atomic Layer ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Metal Insulator ◽  
Potential Barriers ◽  
Insulator Interface ◽  
Layer Deposition ◽  
Current Voltage ◽  
Tantalum Oxide Film

In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.

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