Stable and intense blue-green emission in porous silicon achieved by amine immersion and rapid thermal oxidation

1997 ◽  
Vol 70 (10) ◽  
pp. 1284-1286 ◽  
Author(s):  
Gu-Bo Li ◽  
Liang-Sheng Liao ◽  
Xiao-Bing Liu ◽  
Xiao-Yuan Hou ◽  
Xun Wang
Keyword(s):  
Porous Silicon ◽  
Thermal Oxidation ◽  
Green Emission ◽  
Rapid Thermal Oxidation

Rapid thermal oxidation of porous silicon for surface passivation

1998 ◽  
Vol 1 (3-4) ◽  
pp. 281-285 ◽  
Author(s):  
L Debarge ◽  
J.P Stoquert ◽  
A Slaoui ◽  
L Stalmans ◽  
J Poortmans
Keyword(s):  
Porous Silicon ◽  
Thermal Oxidation ◽  
Surface Passivation ◽  
Rapid Thermal Oxidation

Effect of Rapid Thermal Oxidation on Blue and Red Luminescence Bands of Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
S. Sen ◽  
A. J. Kontkiewicz ◽  
A. M. Kontkiewicz ◽  
G. Nowak ◽  
J. Siejka ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Thermal Oxidation ◽  
Emission Spectra ◽  
Thermally Grown Oxide ◽  
Blue Luminescence ◽  
Excitation Energies ◽  
Blue Band ◽  
Force Microscopy ◽  
Rapid Thermal Oxidation ◽  
Red Luminescence

ABSTRACTPhotoluminescence (PL) of porous silicon after rapid thermal oxidation was studied using excitation energies of 5.0 and 6.4 eV. The emission spectra in both cases are dominated by a broad blue band centered at 430-450 nm and a much weaker red band positioned at 680-720 nm. Using atomic force microscopy (AFM), we have found a correlation between blue PL intensity and increase in feature size caused by progressive oxidation. The blue luminescence, found in porous Si only after oxidation, is identical, with respect to spectrum and fast decay, to that of thermally grown oxide on crystalline Si. Based on these findings, we conclude that the blue luminescence originates from SiO2 rather than from Si nanocrystals embedded in the oxide matrix. The red luminescence, on the contrary, has a different origin. The intensity of red band is a function of oxidation temperature and at RTP above 1050 °C, the red band is completely eliminated. The red luminescence characteristics are discussed in relation to the possible mechanism.

scholarly journals Unusual Photoluminescence Decay of Porous Silicon Prepared by Rapid Thermal Oxidation and Quenching in Liquid Nitrogen

2002 ◽  
Vol 43 (11) ◽  
pp. 2832-2837 ◽  
Author(s):  
Toshimasa Wadayama ◽  
Tuyoshi Arigane ◽  
Kensho Hayamizu ◽  
Aritada Hatta
Keyword(s):  
Porous Silicon ◽  
Thermal Oxidation ◽  
Liquid Nitrogen ◽  
Rapid Thermal Oxidation ◽  
Photoluminescence Decay

Influence of rapid thermal oxidation on differently prepared porous silicon

1995 ◽  
Vol 255 (1-2) ◽  
pp. 224-227 ◽  
Author(s):  
Walter Lang ◽  
Peter Steiner ◽  
Frank Kozlowski ◽  
Peter Ramm
Keyword(s):  
Porous Silicon ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation
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