A critical thickness condition for a strained compliant substrate/epitaxial film system

1996 ◽  
Vol 69 (2) ◽  
pp. 173-175 ◽  
Author(s):  
L. B. Freund ◽  
W. D. Nix
Keyword(s):  
Critical Thickness ◽  
Epitaxial Film ◽  
Film System ◽  
Compliant Substrate

Dislocation Threading Through an Epitaxial Film: an Analysis Based on the Peierls-Nabarro Concept

1993 ◽  
Vol 308 ◽  
Author(s):  
G. E. Beltz ◽  
L. B. Freund
Keyword(s):  
Critical Thickness ◽  
Epitaxial Film ◽  
Continuum Theory ◽  
Dislocation Core ◽  
Critical Layer Thickness ◽  
Cutoff Parameter ◽  
Mismatch Strain ◽  
Realistic Description ◽  
Cutoff Radius ◽  
The Continuum

ABSTRACTThe Peierls-Nabarro theory of crystal dislocations is applied to estimate the critical thickness of a strained layer bonded to a substrate for a given mismatch strain. Previous analyses were based on the continuum theory of elastic dislocations, and hence depended on the artificial core cutoff parameter r0. The Peierls-Nabarro theory makes use of an interplanar shear law, which leads to a more realistic description of the stresses and displacements in the vicinity of a dislocation core, thus eliminating the need for the core cutoff parameter. The dependence of the critical layer thickness on the mismatch strain in films with a diamond cubic lattice is found to be similar to that predicted by the continuum elastic dislocation theory, provided that a core cutoff radius equal to about one-tenth the Burgers displacement is used.

Compliant Substrates for Reduction of Strain Relief in Mismatched Overlayers

1996 ◽  
Vol 441 ◽  
Author(s):  
Carrie Carter-Coman ◽  
Robert Bicknell-Tassius ◽  
April S. Brown ◽  
Nan Marie Jokerst
Keyword(s):  
Thin Film ◽  
Variable Thickness ◽  
Critical Thickness ◽  
Strain Relief ◽  
Compliant Substrate ◽  
Compliant Substrates ◽  
Experimental Strain

AbstractThin film compliant substrates can be used to extend the critical thickness in mismatched overlayers. A metastability model has been coupled with recent experimental strain relief data to determine the critical thickness of InGaAs epilayers grown on GaAs compliant substrates of variable thickness. The results of this model are also compared to other compliant substrate critical thickness models.

Thermodynamics of Thin Film Epitaxy

2002 ◽  
Vol 69 (4) ◽  
pp. 415-418 ◽  
Author(s):  
R. C. Cammarata ◽  
K. Sieradzki
Keyword(s):  
Thin Film ◽  
Critical Thickness ◽  
Epitaxial Film ◽  
Free Energies ◽  
Equilibrium Thermodynamics ◽  
Direct Identification ◽  
Equilibrium Volume ◽  
Variation Approach ◽  
Thin Film Epitaxy ◽  
Volume Stress

The mechanics of thin film epitaxy is developed using an equilibrium thermodynamics formalism and linear elasticity. A virtual variation approach is employed that leads to a direct identification of the important volume and surface thermodynamic parameters characterizing mechanical equilibrium. In particular, the equilibrium volume stress state of an epitaxial film as a function of the film thickness, surface free energies, and surface stresses is obtained. It is shown how this formalism can be used to determine the critical thickness for epitaxy.

Metastability modeling of compliant substrate critical thickness using experimental strain relief data

1997 ◽  
Vol 71 (10) ◽  
pp. 1344-1346 ◽  
Author(s):  
Carrie Carter-Coman ◽  
Robert Bicknell-Tassius ◽  
April S. Brown ◽  
Nan Marie Jokerst
Keyword(s):  
Critical Thickness ◽  
Strain Relief ◽  
Compliant Substrate ◽  
Experimental Strain

Critical thickness of contact melting in the Au/Ge layered film system

2012 ◽  
Vol 512 (1) ◽  
pp. 311-315 ◽  
Author(s):  
A.P. Kryshtal ◽  
R.V. Sukhov ◽  
A.A. Minenkov
Keyword(s):  
Critical Thickness ◽  
Contact Melting ◽  
Film System
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