Metastability modeling of compliant substrate critical thickness using experimental strain relief data

1997 ◽  
Vol 71 (10) ◽  
pp. 1344-1346 ◽  
Author(s):  
Carrie Carter-Coman ◽  
Robert Bicknell-Tassius ◽  
April S. Brown ◽  
Nan Marie Jokerst
Keyword(s):  
Critical Thickness ◽  
Strain Relief ◽  
Compliant Substrate ◽  
Experimental Strain

Compliant Substrates for Reduction of Strain Relief in Mismatched Overlayers

1996 ◽  
Vol 441 ◽  
Author(s):  
Carrie Carter-Coman ◽  
Robert Bicknell-Tassius ◽  
April S. Brown ◽  
Nan Marie Jokerst
Keyword(s):  
Thin Film ◽  
Variable Thickness ◽  
Critical Thickness ◽  
Strain Relief ◽  
Compliant Substrate ◽  
Compliant Substrates ◽  
Experimental Strain

AbstractThin film compliant substrates can be used to extend the critical thickness in mismatched overlayers. A metastability model has been coupled with recent experimental strain relief data to determine the critical thickness of InGaAs epilayers grown on GaAs compliant substrates of variable thickness. The results of this model are also compared to other compliant substrate critical thickness models.

Creating Three-Dimensionally Confined Nanoscale Strained Structures Via Substrate Encoded Size-Reducing Epitaxy and the Enhancement of Critical Thickness for Island Formation

1995 ◽  
Vol 380 ◽  
Author(s):  
A. Konkar ◽  
A. Madhukar ◽  
P. Chen
Keyword(s):  
Critical Thickness ◽  
Growth Behavior ◽  
Linear Size ◽  
Strain Relief ◽  
Island Formation ◽  
Early Stages ◽  
Deposition Thickness ◽  
First Time

ABSTRACTSubstrate encoded size-reducing epitaxy (SESRE) is utilized to fabricate, in-situ, threedimensionally confined InAs volumes on <100> oriented square mesas patterned onto GaAs(001) substrates. As a function of InAs deposition thickness two remarkable results are found: (i) the strain relief available in mesas of linear size ≤ 100 nm allows the mesa top InAs layers up to thickness ∼ 11 ML to remain coherent and maintain 2D morphology even though on unpatterned substrates onset of 3D island formation at ∼ 2 ML InAs is well documented. (ii) With increasing deposition, once the InAs thickness on mesa tops of linear size ∼ 75 nrn reaches ∼ 11 ML, no further growth occurs even for deposition amounts in excess of twice this value. This suggests complete migration of In away from the mesa top to the sidewalls once the InAs thickness on the mesa top reaches ∼ 11 ML even though, at the early stages of deposition, In migrates from the sidewalls to the mesa top. A strain-induced “self-limiting” growth behavior on sub 100nm mesas is thus indicated for the first time.

A Molecular Dynamics Study of InGaAs Layers on GaAs Substrates

1994 ◽  
Vol 340 ◽  
Author(s):  
G J Moran ◽  
I Morrison ◽  
C C Matthai
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Elasticity Theory ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Thin Layers ◽  
Misfit Dislocations ◽  
Strain Relief ◽  
Gaas Substrates ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular dynamics simulations of thin layers of InGaAs on GaAs substrates for different In concentrations to determine the critical thickness before strain relaxation occurs. We have considered both dislocation formation and islanding as possible mechanisms for strain relief. The results for the critical thickness for strain relief by misfit dislocations is slightly lower than that found using elasticity theory. For high In concentrations, facetted islands are found to be stable and are energetically favoured.

Modified Dislocation Structures in GexSi1-x Double Epilayers on (001)Si

1989 ◽  
Vol 160 ◽  
Author(s):  
Eric P. Kvam
Keyword(s):  
Misfit Dislocation ◽  
Critical Thickness ◽  
Misfit Dislocations ◽  
Strain Relief ◽  
Edge Type

AbstractDouble epilayers of different compositions of GexSi1-x on (001)Si are observed to have dislocation contents which differ markedly from similar single epilayers. An initial epilayer, grown below its critical thickness, underwent substantial misfit dislocation introduction, while a second epilayer, grown at a composition where edge-type misfit dislocations are normally observed to dominate the morphology, contained mostly 60° type dislocations. It is suggested that dislocation entry into the upper, high mismatch epilayer allows many dislocations to enter the buried, low mismatch epilayer, and that this in turn affects the dislocation morphology in the upper layer through strain relief.

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