Thermodynamics of Thin Film Epitaxy

2002 ◽  
Vol 69 (4) ◽  
pp. 415-418 ◽  
Author(s):  
R. C. Cammarata ◽  
K. Sieradzki
Keyword(s):  
Thin Film ◽  
Critical Thickness ◽  
Epitaxial Film ◽  
Free Energies ◽  
Equilibrium Thermodynamics ◽  
Direct Identification ◽  
Equilibrium Volume ◽  
Variation Approach ◽  
Thin Film Epitaxy ◽  
Volume Stress

The mechanics of thin film epitaxy is developed using an equilibrium thermodynamics formalism and linear elasticity. A virtual variation approach is employed that leads to a direct identification of the important volume and surface thermodynamic parameters characterizing mechanical equilibrium. In particular, the equilibrium volume stress state of an epitaxial film as a function of the film thickness, surface free energies, and surface stresses is obtained. It is shown how this formalism can be used to determine the critical thickness for epitaxy.

Development of a Novel Metal Epitaxy Method towards Ni Based Electro-magnetic Hybrid Systems

2006 ◽  
Vol 962 ◽  
Author(s):  
Akifumi Matsuda ◽  
Masayasu Kasahara ◽  
Takahiro Watanabe ◽  
Wakana Hara ◽  
Sei Otaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Film ◽  
Hydrogen Reduction ◽  
Selective Reduction ◽  
Hydrogen Atmosphere ◽  
Oxide Thin Film ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Oxide Substrate ◽  
Electro Magnetic

ABSTRACTThe epitaxial Ni (111) thin film on the oxide substrate could be obtained by a novel epitaxy method, employing pulsed laser deposition (PLD) of NiO (111) epitaxial film on the sapphire (α-Al2O3single crystal) substrate and successive hydrogen reduction of NiO. The NiO (111) epitaxial film was deposited on the sapphire (0001) substrate at room-temperature by PLD, and then reduced into the Ni epitaxial film by annealing (300 °C to 500 °C) in the hydrogen-atmosphere. On the other hand, the polycrystalline Ni metal thin film was obtained by reduction of the polycrystalline NiO film, indicating necessity of epitaxial growth for the precursor oxide thin film in the metal epitaxy. The present epitaxy method suggests the possible formation of [Ni/α-Al2O3] epitaxial multilayer via selective reduction of oxide multilayer.

Dislocation Threading Through an Epitaxial Film: an Analysis Based on the Peierls-Nabarro Concept

1993 ◽  
Vol 308 ◽  
Author(s):  
G. E. Beltz ◽  
L. B. Freund
Keyword(s):  
Critical Thickness ◽  
Epitaxial Film ◽  
Continuum Theory ◽  
Dislocation Core ◽  
Critical Layer Thickness ◽  
Cutoff Parameter ◽  
Mismatch Strain ◽  
Realistic Description ◽  
Cutoff Radius ◽  
The Continuum

ABSTRACTThe Peierls-Nabarro theory of crystal dislocations is applied to estimate the critical thickness of a strained layer bonded to a substrate for a given mismatch strain. Previous analyses were based on the continuum theory of elastic dislocations, and hence depended on the artificial core cutoff parameter r0. The Peierls-Nabarro theory makes use of an interplanar shear law, which leads to a more realistic description of the stresses and displacements in the vicinity of a dislocation core, thus eliminating the need for the core cutoff parameter. The dependence of the critical layer thickness on the mismatch strain in films with a diamond cubic lattice is found to be similar to that predicted by the continuum elastic dislocation theory, provided that a core cutoff radius equal to about one-tenth the Burgers displacement is used.

Energetics and kinetics of Cu atoms and clusters on the Si(111)-7 × 7 surface: first-principles calculations

2016 ◽  
Vol 18 (27) ◽  
pp. 18549-18554 ◽  
Author(s):  
Xiao-Yan Ren ◽  
Chun-Yao Niu ◽  
Wei-Guang Chen ◽  
Ming-Sheng Tang ◽  
Jun-Hyung Cho
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
First Principles ◽  
Self Assembly ◽  
Catalytic Reactions ◽  
Semiconductor Surface ◽  
First Principles Calculations ◽  
Metal Atoms ◽  
Thin Film Epitaxy ◽  
Kinetics Of

Exploring the properties of noble metal atoms and nano- or subnano-clusters on the semiconductor surface is of great importance in many surface catalytic reactions, self-assembly processes, crystal growth, and thin film epitaxy.

“Nanostructures in Thin-film Epitaxy: Exploring and Exploiting Substrate-mediated Interactions”

2004 ◽  
Vol 30 (5) ◽  
pp. 273-279 ◽  
Author(s):  
Michael L. Merrick* ◽  
Kristen A. Fichthorn
Keyword(s):  
Thin Film ◽  
Thin Film Epitaxy

scholarly journals Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

1995 ◽  
Vol 406 ◽  
Author(s):  
J. A. Floro ◽  
E. Chason ◽  
S. R. Lee
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Time Measurement ◽  
Film Stress ◽  
Wafer Curvature ◽  
Thin Film Stress ◽  
Real Time Measurement ◽  
Cvd Growth

AbstractWe describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained.

scholarly journals Island Nucleation in Thin-Film Epitaxy: A First-Principles Investigation

2000 ◽  
Vol 84 (23) ◽  
pp. 5371-5374 ◽  
Author(s):  
Kristen A. Fichthorn ◽  
Matthias Scheffler
Keyword(s):  
Thin Film ◽  
First Principles ◽  
Island Nucleation ◽  
Thin Film Epitaxy

Extrapolation of critical thickness of GaN thin films from lattice constant data using synchrotron X-ray

1996 ◽  
Vol 423 ◽  
Author(s):  
Chinkyo Kim ◽  
I. K. Robinson ◽  
Jaemin Myoung ◽  
Kyuhwan Shim ◽  
Kyekyoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Thickness ◽  
Energy Estimate ◽  
Accurate Estimate ◽  
X Ray ◽  
Lattice Constants ◽  
Pseudomorphic Growth ◽  
Sudden Transition ◽  
First Time

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.

Stabilization of a h.c.p. Cu phase by thin film epitaxy on Co(1 0 0)

1990 ◽  
Vol 74 (8) ◽  
pp. 811-815 ◽  
Author(s):  
C.J. Barnes ◽  
M. Valden ◽  
A. Vuoristo
Keyword(s):  
Thin Film ◽  
Thin Film Epitaxy
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