Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

1996 ◽  
Vol 69 (20) ◽  
pp. 3072-3074 ◽  
Author(s):  
A. O. Kosogov ◽  
P. Werner ◽  
U. Gösele ◽  
N. N. Ledentsov ◽  
D. Bimberg ◽  
...  
2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.


2006 ◽  
Vol 28 (6-7) ◽  
pp. 750-758 ◽  
Author(s):  
K. Lorenz ◽  
U. Wahl ◽  
E. Alves ◽  
E. Nogales ◽  
S. Dalmasso ◽  
...  

2005 ◽  
Vol 491 (1-2) ◽  
pp. 323-327 ◽  
Author(s):  
Li Wang ◽  
Yong Pu ◽  
Wenqing Fang ◽  
Jiangnan Dai ◽  
Changda Zheng ◽  
...  

2018 ◽  
Vol 86 ◽  
pp. 545-549 ◽  
Author(s):  
Magdy Ali ◽  
Jehan El Nady ◽  
Shaker Ebrahim ◽  
Moataz Soliman

2007 ◽  
Vol 101 (2) ◽  
pp. 024918 ◽  
Author(s):  
B. Alloing ◽  
C. Zinoni ◽  
L. H. Li ◽  
A. Fiore ◽  
G. Patriarche

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