High temperature annealing of rare earth implanted GaN films: Structural and optical properties

2006 ◽  
Vol 28 (6-7) ◽  
pp. 750-758 ◽  
Author(s):  
K. Lorenz ◽  
U. Wahl ◽  
E. Alves ◽  
E. Nogales ◽  
S. Dalmasso ◽  
...  
Keyword(s):  
Optical Properties ◽  
Rare Earth ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Structural And Optical Properties

Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

1996 ◽  
Vol 69 (20) ◽  
pp. 3072-3074 ◽  
Author(s):  
A. O. Kosogov ◽  
P. Werner ◽  
U. Gösele ◽  
N. N. Ledentsov ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Structural And Optical Properties

Effect of high-temperature annealing on the structural and optical properties of ZnO films

2005 ◽  
Vol 491 (1-2) ◽  
pp. 323-327 ◽  
Author(s):  
Li Wang ◽  
Yong Pu ◽  
Wenqing Fang ◽  
Jiangnan Dai ◽  
Changda Zheng ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Zno Films ◽  
High Temperature Annealing ◽  
Structural And Optical Properties

Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition

2010 ◽  
Vol 25 (4) ◽  
pp. 680-686 ◽  
Author(s):  
Zhifeng Ying ◽  
Wentao Tang ◽  
Zhigao Hu ◽  
Wenwu Li ◽  
Jian Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Optical Properties ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Temperature Annealing ◽  
Good Thermal Stability ◽  
Transmission Measurements ◽  
Deposited Films

The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

2005 ◽  
Vol 892 ◽  
Author(s):  
Katharina Lorenz ◽  
E. Nogales ◽  
R. Nédélec ◽  
J. Penner ◽  
R. Vianden ◽  
...  
Keyword(s):  
Optical Properties ◽  
Rare Earth ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Strong Increase ◽  
Structural And Optical Properties ◽  
Nitrogen Gas ◽  
Higher Temperature ◽  
The Eu ◽  
The Rare Earth

AbstractGaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 °C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000 °C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3 + N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 °C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

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