Effects of high-temperature annealing on structural and optical properties of highly ordered porous alumina membranes

2004 ◽  
Vol 85 (19) ◽  
pp. 4364 ◽  
Author(s):  
W. L. Xu ◽  
M. J. Zheng ◽  
S. Wu ◽  
W. Z. Shen
1996 ◽  
Vol 69 (20) ◽  
pp. 3072-3074 ◽  
Author(s):  
A. O. Kosogov ◽  
P. Werner ◽  
U. Gösele ◽  
N. N. Ledentsov ◽  
D. Bimberg ◽  
...  

2006 ◽  
Vol 28 (6-7) ◽  
pp. 750-758 ◽  
Author(s):  
K. Lorenz ◽  
U. Wahl ◽  
E. Alves ◽  
E. Nogales ◽  
S. Dalmasso ◽  
...  

2005 ◽  
Vol 491 (1-2) ◽  
pp. 323-327 ◽  
Author(s):  
Li Wang ◽  
Yong Pu ◽  
Wenqing Fang ◽  
Jiangnan Dai ◽  
Changda Zheng ◽  
...  

2010 ◽  
Vol 25 (4) ◽  
pp. 680-686 ◽  
Author(s):  
Zhifeng Ying ◽  
Wentao Tang ◽  
Zhigao Hu ◽  
Wenwu Li ◽  
Jian Sun ◽  
...  

The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.


2013 ◽  
Vol 755 ◽  
pp. 75-81
Author(s):  
C.A. León-Patiño ◽  
E.A. Aguilar-Reyes ◽  
C. Ruiz-Aguilar

Highly ordered through-hole anodic porous alumina membranes were fabricated by electrochemical oxidation of aluminum in a controlled two-step process. A teflon dispositive was used to ensure single side anodization. Under the most appropriate condition for the fabrication of ideally ordered anodic aluminum oxide (AAO), the voltage used was 15 V during 24 h in a 15 % w/v sulfuric acid solution. SEM, TEM and FESEM characterization shows that the as-fabricated AAO film has a defect-free array of straight parallel channels perpendicular to the surface. The thickness of the porous membrane is 20 microns, approximately. The ordered channels are formed in a honey comb arrange with a pore diameter in the range 20-30 nm, wall thickness of 10-20 nm, interpore distance of 40 nm, and high aspect ratio of 850. The pore density, quantified by image analysis, is 5.4×1010 pore/cm2; perfect ordering was maintained in the full depth of the membrane. Dimensions of this porous structure provide a convenient way to precision engineer the nanoscale morphology.


2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.


2012 ◽  
Vol 50 (1) ◽  
pp. 59-63 ◽  
Author(s):  
HyunChul Jang ◽  
JungMi Choi ◽  
KiTae An ◽  
Naesung Lee ◽  
Yunsun Park ◽  
...  

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