scholarly journals In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties

2010 ◽  
Vol 107 (1) ◽  
pp. 014312 ◽  
Author(s):  
A. Urbańczyk ◽  
G. J. Hamhuis ◽  
R. Nötzel
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures

2003 ◽  
Vol 94 (10) ◽  
pp. 6603-6606 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Matrix effects on the structural and optical properties of InAs quantum dots

2001 ◽  
Vol 79 (22) ◽  
pp. 3681-3683 ◽  
Author(s):  
J. X. Chen ◽  
U. Oesterle ◽  
A. Fiore ◽  
R. P. Stanley ◽  
M. Ilegems ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Matrix Effects ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

2007 ◽  
Vol 300 (2) ◽  
pp. 319-323 ◽  
Author(s):  
Ho Jin Park ◽  
Jong Ho Kim ◽  
J.J. Yoon ◽  
J.S. Son ◽  
D.Y. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Annealing Effects

Structural and optical properties of shape-engineered InAs quantum dots

2003 ◽  
Vol 94 (4) ◽  
pp. 2486-2490 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

Does The 1.25 eV Luminescence of Coherently Strained InGaAs Insertions in GaAs Originate from Quantum Dots?

1995 ◽  
Vol 417 ◽  
Author(s):  
J.-L. Lazzari ◽  
R. Klann ◽  
A. Mazuelas ◽  
A. Trampert ◽  
M. Wassermeier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Effective Mass ◽  
Strain State ◽  
Narrow Range ◽  
Narrow Size Distribution ◽  
Structural And Optical Properties ◽  
Photoluminescence Band ◽  
Inas Quantum Dots ◽  
Striking Contrast

AbstractWe study the growth of InAs/AlxGa1-xAs/GaAs heterostructures as well as their structural and optical properties. Structurally coherent InAs islands with a narrow size distribution are found to be formed only in a very narrow range of InAs coverage. In striking contrast, the photoluminescence band in the 1.15–1.35 eV spectral range, which is commonly attributed to the emission from InAs quantum dots, is present for all of our structures, regardless the presence or absence of InAs islands and their strain state. Moreover, for constant InAs coverage this PL band follows not the Γ gap but the L gap of the AlxGa1-xAs barrier. This latter result is in disagreement with effective mass calculations for three-dimensionally confined excitons.

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