Observation of boron doping induced surface roughening in silicon molecular beam epitaxy

1996 ◽  
Vol 68 (23) ◽  
pp. 3278-3280 ◽  
Author(s):  
Xuekun Lu ◽  
Zuimin Jiang ◽  
Haijun Zhu ◽  
Xiangjiu Zhang ◽  
Xun Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doping ◽  
Surface Roughening

scholarly journals Roughening in Nonlinear Surface Growth Model

2020 ◽  
Vol 10 (4) ◽  
pp. 1422 ◽  
Author(s):  
Gabriella Bognár
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Film Growth ◽  
Nonlinear Differential Equations ◽  
Numerical Approach ◽  
Surface Roughening ◽  
Time Interval ◽  
Nonlinear Surface ◽  
Over Time

The aim of this paper is to examine the coarsening process in the evolution of the surface morphology during molecular beam epitaxy (MBE). A numerical approach for modeling the evolution of surface roughening in film growth by MBE is proposed. The model is based on the nonlinear differential equations by Kuramoto–Sivashinsky (KS) namely, KS and CKS (conserved KS). In particular, we propose a “combined version” of KS and CKS equations, which is solved as a function of a parameter r for the 1 + 1 dimensional case. The computation provides film height as a function of space and time. From this quantity the change of the width of the film over time has numerically been studied as a function of r. The main result of the research is that the surface width is exponentially increasing with increasing time and the change in surface width for smaller r values is significantly greater over longer time interval.

Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

2011 ◽  
Vol 109 (6) ◽  
pp. 063513 ◽  
Author(s):  
K. A. Bratland ◽  
T. Spila ◽  
D. G. Cahill ◽  
J. E. Greene ◽  
P. Desjardins
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Continuum Model ◽  
Molecular Beam ◽  
Surface Roughening

Kinetic surface roughening in molecular beam epitaxy of InP

1993 ◽  
Vol 70 (26) ◽  
pp. 4106-4109 ◽  
Author(s):  
M. A. Cotta ◽  
R. A. Hamm ◽  
T. W. Staley ◽  
S. N. G. Chu ◽  
L. R. Harriott ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Roughening

scholarly journals Elemental boron doping behavior in silicon molecular beam epitaxy

1991 ◽  
Vol 58 (5) ◽  
pp. 481-483 ◽  
Author(s):  
C. P. Parry ◽  
S. M. Newstead ◽  
R. D. Barlow ◽  
P. Augustus ◽  
R. A. A. Kubiak ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doping ◽  
Elemental Boron ◽  
Doping Behavior

SCALING APPROACH TO ANOMALOUS SURFACE ROUGHENING OF THE (d+1)-DIMENSIONAL MOLECULAR-BEAM EPITAXY GROWTH EQUATIONS

2006 ◽  
Vol 20 (30) ◽  
pp. 1935-1941 ◽  
Author(s):  
HUI XIA ◽  
GANG TANG ◽  
KUI HAN ◽  
DA-PENG HAO ◽  
HUA CHEN ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Surface Roughening ◽  
Dynamic Scaling ◽  
Scaling Analysis ◽  
Local Fluctuations ◽  
Standard Family ◽  
Anomalous Surface ◽  
Growth Equations

To determine anomalous dynamic scaling of continuum growth equations, López12 proposed an analytical approach, which is based on the scaling analysis introduced by Hentschel and Family.15 In this work, we generalize this scaling analysis to the (d+1)-dimensional molecular-beam epitaxy equations to determine their anomalous dynamic scaling. The growth equations studied here include the linear molecular-beam epitaxy (LMBE) and Lai–Das Sarma–Villain (LDV). We find that both the LMBE and LDV equations, when the substrate dimension d>2, correspond to a standard Family–Vicsek scaling, however, when d<2, exhibit anomalous dynamic roughening of the local fluctuations of the growth height. When the growth equations exhibit anomalous dynamic scaling, we obtain the local roughness exponents by using scaling relation α loc =α-zκ, which are consistent with the corresponding numerical results.

Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 118-125 ◽  
Author(s):  
C. P. Parry ◽  
R. A. Kubiak ◽  
S. M. Newstead ◽  
T. E. Whall ◽  
E. H. C. Parker
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Boron Doping
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