Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 118-125 ◽  
Author(s):  
C. P. Parry ◽  
R. A. Kubiak ◽  
S. M. Newstead ◽  
T. E. Whall ◽  
E. H. C. Parker
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Boron Doping

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic

Temperature dependence of optical transitions in AlxGa1–xAs/GaAs quantum well structures grown by molecular beam epitaxy

2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structures

Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy

1981 ◽  
Vol 38 (12) ◽  
pp. 974-976 ◽  
Author(s):  
J. R. Pawlik ◽  
W. T. Tsang ◽  
F. R. Nash ◽  
R. L. Hartman ◽  
V. Swaminathan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Reduced Temperature
Sign in / Sign up

Export Citation Format

Share Document