scholarly journals Elemental boron doping behavior in silicon molecular beam epitaxy

1991 ◽  
Vol 58 (5) ◽  
pp. 481-483 ◽  
Author(s):  
C. P. Parry ◽  
S. M. Newstead ◽  
R. D. Barlow ◽  
P. Augustus ◽  
R. A. A. Kubiak ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doping ◽  
Elemental Boron ◽  
Doping Behavior

Growth of Ga-face and N-face GaN films using ZnO Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
E. S. Hellman ◽  
D. N. E. Buchanan ◽  
D. Wiesmann ◽  
I. Brener
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Molecular Beam ◽  
Piezoelectric Coefficient ◽  
Droplet Formation ◽  
Lower Threshold ◽  
Striking Difference ◽  
Doping Behavior ◽  
Image Position

We have used plasma molecular beam epitaxy on (0 0 0 1) and (0 0 0 ) ZnO substrates to induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO substrates can be easily and unambiguously determined by measuring the sign of the piezoelectric coefficient. If we assume that N-face GaN grows on O face ZnO and that Ga-face GaN grows on Zn face ZnO, then we can study the growth of both Ga and N faces. The most striking difference is the doping behavior of the two faces. Growth on the Ga-face is characterized by a higher carrier concentration and a lower threshold for Ga droplet formation.

Sulfur doping behavior of gallium antimonide grown by molecular‐beam epitaxy

1988 ◽  
Vol 63 (2) ◽  
pp. 395-399 ◽  
Author(s):  
I. Poole ◽  
M. E. Lee ◽  
K. E. Singer ◽  
J. E. F. Frost ◽  
T. M. Kerr ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Sulfur Doping ◽  
Doping Behavior

Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 118-125 ◽  
Author(s):  
C. P. Parry ◽  
R. A. Kubiak ◽  
S. M. Newstead ◽  
T. E. Whall ◽  
E. H. C. Parker
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Boron Doping

A comparative study of heavy boron doping in silicon and Si1−x Gex layers grown by molecular beam epitaxy

1992 ◽  
Vol 222 (1-2) ◽  
pp. 42-45 ◽  
Author(s):  
M.R. Sardela ◽  
W.-X. Ni ◽  
H. Radpisheh ◽  
G.V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam ◽  
Boron Doping

Surface Accumulation of Boron During Si Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
C. P. Parry ◽  
R. A. A. Kubiak ◽  
S. M. Newstead ◽  
E. H. C. Parker ◽  
T. E. Whall
Keyword(s):  
Low Temperatures ◽  
Marked Improvement ◽  
Molecular Beam ◽  
Boron Doping ◽  
Surface Phase ◽  
Elemental Boron ◽  
Device Structures ◽  
Doping Behaviour ◽  
Evaporation Source ◽  
Boron Source

ABSTRACTA high temperature, elemental boron evaporation source has been used for the study of the boron doping behaviour in Si as a function of growth temperature and doping level. Significant profile smearing of boron at doping levels below 5×1018cm−3 is observed. Profile smearing is more severe in higher doped samples for growth temperatures above 600°C at a growth rate of 0.28 nms−1. This is interpreted as arising from the formation of a surface phase of boron at higher doping levels. The marked improvement in profile abruptness at low temperatures suggests significant benefits associated with the use of an elemental boron source for the growth of high resolution Si/Si1−xGex device structures.

Observation of boron doping induced surface roughening in silicon molecular beam epitaxy

1996 ◽  
Vol 68 (23) ◽  
pp. 3278-3280 ◽  
Author(s):  
Xuekun Lu ◽  
Zuimin Jiang ◽  
Haijun Zhu ◽  
Xiangjiu Zhang ◽  
Xun Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doping ◽  
Surface Roughening

Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping

1994 ◽  
Vol 76 (3) ◽  
pp. 1884-1888 ◽  
Author(s):  
T. R. Bramblett ◽  
Q. Lu ◽  
T. Karasawa ◽  
M.‐A. Hasan ◽  
S. K. Jo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Boron Doping ◽  
Gas Source

Elemental boron‐dopedp+‐SiGe layers grown by molecular beam epitaxy for infrared detector applications

1992 ◽  
Vol 60 (3) ◽  
pp. 380-382 ◽  
Author(s):  
T. L. Lin ◽  
T. George ◽  
E. W. Jones ◽  
A. Ksendzov ◽  
M. L. Huberman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Elemental Boron
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