Boron doping in Si molecular beam epitaxy by co‐evaporation of B2O3or doped silicon

1986 ◽  
Vol 48 (3) ◽  
pp. 221-223 ◽  
Author(s):  
R. M. Ostrom ◽  
F. G. Allen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doping ◽  
Doped Silicon

The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)

1987 ◽  
Vol 42 (3) ◽  
pp. 197-200 ◽  
Author(s):  
R. A. A. Kubiak ◽  
S. M. Newstead ◽  
W. Y. Leong ◽  
R. Houghton ◽  
E. H. C. Parker ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Doped Silicon

scholarly journals Elemental boron doping behavior in silicon molecular beam epitaxy

1991 ◽  
Vol 58 (5) ◽  
pp. 481-483 ◽  
Author(s):  
C. P. Parry ◽  
S. M. Newstead ◽  
R. D. Barlow ◽  
P. Augustus ◽  
R. A. A. Kubiak ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doping ◽  
Elemental Boron ◽  
Doping Behavior

Tunneling current spectroscopy of electron subbands inn‐type δ‐doped silicon structures grown by molecular beam epitaxy

1990 ◽  
Vol 67 (4) ◽  
pp. 1962-1968 ◽  
Author(s):  
Hui‐Min Li ◽  
Karl‐Fredrik Berggren ◽  
Wei‐Xin Ni ◽  
Bo E. Sernelius ◽  
Magnus Willander ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunneling Current ◽  
Doped Silicon ◽  
Silicon Structures

Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 118-125 ◽  
Author(s):  
C. P. Parry ◽  
R. A. Kubiak ◽  
S. M. Newstead ◽  
T. E. Whall ◽  
E. H. C. Parker
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Boron Doping

Arsenic surface segregation during in situ doped silicon and Si1−xGex molecular beam epitaxy

2005 ◽  
Vol 281 (2-4) ◽  
pp. 334-343 ◽  
Author(s):  
Xian Liu ◽  
Qiang Tang ◽  
James S. Harris ◽  
Theodore I. Kamins
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Doped Silicon

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

A comparative study of heavy boron doping in silicon and Si1−x Gex layers grown by molecular beam epitaxy

1992 ◽  
Vol 222 (1-2) ◽  
pp. 42-45 ◽  
Author(s):  
M.R. Sardela ◽  
W.-X. Ni ◽  
H. Radpisheh ◽  
G.V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam ◽  
Boron Doping
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