Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

1996 ◽  
Vol 68 (9) ◽  
pp. 1232-1234 ◽  
Author(s):  
Thomas Lauinger ◽  
Jan Schmidt ◽  
Armin G. Aberle ◽  
Rudolf Hezel
Keyword(s):  
Silicon Nitride ◽  
Surface Recombination ◽  
Remote Plasma

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane

Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 747-750 ◽  
Author(s):  
Toru Aoki ◽  
Takuya Ogishima ◽  
Aleksander M Wróbel ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Silicon Nitride ◽  
Film Growth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Remote Plasma

Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices

1985 ◽  
Vol 3 (3) ◽  
pp. 867-872 ◽  
Author(s):  
P. D. Richard ◽  
R. J. Markunas ◽  
G. Lucovsky ◽  
G. G. Fountain ◽  
A. N. Mansour ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Remote Plasma ◽  
Gate Insulators ◽  
Plasma Enhanced Cvd
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