Extremely low surface recombination velocities on low-resistivityn-type andp-type crystalline silicon using dynamically deposited remote plasma silicon nitride films

2012 ◽  
Vol 22 (6) ◽  
pp. 641-647 ◽  
Author(s):  
Shubham Duttagupta ◽  
Fen Lin ◽  
Marshall Wilson ◽  
Matthew B. Boreland ◽  
Bram Hoex ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Remote Plasma ◽  
Silicon Nitride Films

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

1996 ◽  
Vol 68 (9) ◽  
pp. 1232-1234 ◽  
Author(s):  
Thomas Lauinger ◽  
Jan Schmidt ◽  
Armin G. Aberle ◽  
Rudolf Hezel
Keyword(s):  
Silicon Nitride ◽  
Surface Recombination ◽  
Remote Plasma

Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination

2017 ◽  
Vol 7 (4) ◽  
pp. 996-1003 ◽  
Author(s):  
Ziv Hameiri ◽  
Nino Borojevic ◽  
Ly Mai ◽  
Naomi Nandakumar ◽  
Kyung Kim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Recombination ◽  
Thermally Stable ◽  
Silicon Nitride Films
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