Piezoelectric field effects in InGaAs (111)B quantum wells

1995 ◽  
Vol 67 (10) ◽  
pp. 1393-1395 ◽  
Author(s):  
X. Chen ◽  
C. H. Molloy ◽  
D. A. Woolf ◽  
C. Cooper ◽  
D. J. Somerford ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effects ◽  
Piezoelectric Field

Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

1993 ◽  
Vol 48 (11) ◽  
pp. 8491-8494 ◽  
Author(s):  
R. A. Hogg ◽  
T. A. Fisher ◽  
A. R. K. Willcox ◽  
D. M. Whittaker ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Oscillator Strengths ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Transition Energies ◽  
Field Effects ◽  
Piezoelectric Field

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field
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