Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Optical study of the piezoelectric field effect in (111)-oriented CdTe/CdMnTe strained quantum wells

1993 ◽  
pp. 551-556
Author(s):  
Le Si Dang ◽  
R. André ◽  
C. Bodin-Deshayes ◽  
J. Cibert ◽  
H. Okumura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effect ◽  
Optical Study ◽  
Strained Quantum Wells ◽  
Piezoelectric Field

Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells

2001 ◽  
Vol 78 (5) ◽  
pp. 640-642 ◽  
Author(s):  
G. Vaschenko ◽  
D. Patel ◽  
C. S. Menoni ◽  
S. Keller ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dominant Role ◽  
Pressure Behavior ◽  
Piezoelectric Field

Light emission from several-atom In–N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells

2011 ◽  
Vol 59 (7) ◽  
pp. 2773-2782 ◽  
Author(s):  
Jun-jie Shi ◽  
Shuai Zhang ◽  
Mao Yang ◽  
Shang-guo Zhu ◽  
Min Zhang
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Ingan Alloys

Optical study of the piezoelectric field effect in (1 1 1)-oriented CdTe/CdMnTe strained quantum wells

1993 ◽  
Vol 185 (1-4) ◽  
pp. 551-556 ◽  
Author(s):  
Le Si Dang ◽  
R. André ◽  
C. Bodin-Deshayes ◽  
J. Cibert ◽  
H. Okumura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effect ◽  
Optical Study ◽  
Strained Quantum Wells ◽  
Piezoelectric Field

Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
T. Suski ◽  
P. Perlin ◽  
S.P. Lepkowski ◽  
H. Teisseyre ◽  
I. Gorczyca ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Light Emission ◽  
Quantum Structures ◽  
First Principle ◽  
Linear Elasticity Theory ◽  
Emission Energy ◽  
Piezoelectric Field ◽  
Experimental Findings ◽  
Piezoelectric Constants

AbstractIn this paper we review studies aiming at elucidation of the mechanisms responsible for anomalously low pressure coefficients of the light emission energy, dEE/dP, observed in quantum structures of InGaN/GaN and GaN/AlGaN. We have established that in hexagonal InGaN/GaN and GaN/AlGaN structures the main mechanism involved is related to the pressure induced increase of the piezoelectric field which determines also the strong red shift of the emission energy with thickness of the quantum well. To reproduce the experimental findings in InGaN/GaN case, it is necessary to take into account the dependence of the piezoelectric constants on the volume-conserving strain. Whereas the experimental results on a decrease of dEE/dP in GaN/AlGaNstructures can be fully accounted for within the linear elasticity theory. In contrast to these findings, dEE/dP magnitude measured in cubic InGaN/GaN quantum structures shows value close to changes of the InGaN bangap with pressure obtained from first principle calculations. The latter result is consistent with the absence of the built-in electric fields in the cubic nitride structures.

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field
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