Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

2001 ◽  
Vol 79 (23) ◽  
pp. 3803-3805 ◽  
Author(s):  
M. E. Aumer ◽  
S. F. LeBoeuf ◽  
B. F. Moody ◽  
S. M. Bedair
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Emission Energy ◽  
Field Effects ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
T. Suski ◽  
P. Perlin ◽  
S.P. Lepkowski ◽  
H. Teisseyre ◽  
I. Gorczyca ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Light Emission ◽  
Quantum Structures ◽  
First Principle ◽  
Linear Elasticity Theory ◽  
Emission Energy ◽  
Piezoelectric Field ◽  
Experimental Findings ◽  
Piezoelectric Constants

AbstractIn this paper we review studies aiming at elucidation of the mechanisms responsible for anomalously low pressure coefficients of the light emission energy, dEE/dP, observed in quantum structures of InGaN/GaN and GaN/AlGaN. We have established that in hexagonal InGaN/GaN and GaN/AlGaN structures the main mechanism involved is related to the pressure induced increase of the piezoelectric field which determines also the strong red shift of the emission energy with thickness of the quantum well. To reproduce the experimental findings in InGaN/GaN case, it is necessary to take into account the dependence of the piezoelectric constants on the volume-conserving strain. Whereas the experimental results on a decrease of dEE/dP in GaN/AlGaNstructures can be fully accounted for within the linear elasticity theory. In contrast to these findings, dEE/dP magnitude measured in cubic InGaN/GaN quantum structures shows value close to changes of the InGaN bangap with pressure obtained from first principle calculations. The latter result is consistent with the absence of the built-in electric fields in the cubic nitride structures.

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

2005 ◽  
Vol 87 (13) ◽  
pp. 131911 ◽  
Author(s):  
S. Srinivasan ◽  
M. Stevens ◽  
F. A. Ponce ◽  
T. Mukai
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Polychromatic Light ◽  
Ingan Quantum Wells

Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting

2009 ◽  
Vol 2 (12) ◽  
pp. 121002 ◽  
Author(s):  
Chaowang Liu ◽  
Alexander Šatka ◽  
Lethy Krishnan Jagadamma ◽  
Paul R. Edwards ◽  
Duncan Allsopp ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Ingan Quantum Wells

scholarly journals Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays

2010 ◽  
Vol 18 (20) ◽  
pp. 21322 ◽  
Author(s):  
John Henson ◽  
Emmanouil Dimakis ◽  
Jeff DiMaria ◽  
Rui Li ◽  
Salvatore Minissale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Silver Nanoparticle ◽  
Light Emission ◽  
Green Light ◽  
Nanoparticle Arrays ◽  
Green Light Emission ◽  
Ingan Quantum Wells

Localization versus field effects in single InGaN quantum wells

2004 ◽  
Vol 84 (1) ◽  
pp. 58-60 ◽  
Author(s):  
A. Bell ◽  
J. Christen ◽  
F. Bertram ◽  
F. A. Ponce ◽  
H. Marui ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effects ◽  
Ingan Quantum Wells

Cathodoluminescence Studies of InGaN Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
F. A. Ponce ◽  
S. A. Galloway ◽  
W. Goetz ◽  
R. S. Kern
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Light Emission ◽  
Narrow Band ◽  
Photoluminescence Spectra ◽  
Single Quantum ◽  
Band Pass ◽  
Ingan Quantum Wells

AbstractLow temperature cathodoluminescence has been used to investigate the spatial characteristics of light emission in InxGa1−xN single quantum wells. High spatial resolution, narrow band pass imaging shows the luminescence to be strongly inhomogeneous in wavelength as well as in intensity on a sub-micron scale. Cathodoluminescence spectra correlate favorably with photoluminescence spectra. However, when spectra are recorded from different areas in spot mode, the quantum emission varies significantly in wavelength. The observed variations are consistent with composition inhomogeneities in the quantum well.

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