Temperature‐dependent critical layer thickness for strained‐layer heterostructures

Keunjoo Kim; Young Hee Lee

doi:10.1063/1.115106

Temperature‐dependent critical layer thickness for strained‐layer heterostructures

Applied Physics Letters ◽

10.1063/1.115106 ◽

1995 ◽

Vol 67 (15) ◽

pp. 2212-2214 ◽

Cited By ~ 20

Author(s):

Keunjoo Kim ◽

Young Hee Lee

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

Temperature Dependent ◽

Critical Layer Thickness ◽

Strained Layer

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Temperature‐dependent critical layer thickness for In0.36Ga0.64As/GaAs single quantum wells

Applied Physics Letters ◽

10.1063/1.104511 ◽

1991 ◽

Vol 58 (8) ◽

pp. 854-855 ◽

Cited By ~ 57

Author(s):

M. J. Ekenstedt ◽

S. M. Wang ◽

T. G. Andersson

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Single Quantum ◽

Temperature Dependent ◽

Critical Layer Thickness

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Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]

Applied Physics Letters ◽

10.1063/1.97637 ◽

1986 ◽

Vol 49 (4) ◽

pp. 229-229 ◽

Cited By ~ 278

Author(s):

R. People ◽

J. C. Bean

Keyword(s):

Layer Thickness ◽

Lattice Mismatch ◽

Critical Layer ◽

Critical Layer Thickness ◽

Strained Layer

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Calculation of critical layer thickness considering thermal strain in Si1−xGex/Si strained-layer heterostructures

Journal of Applied Physics ◽

10.1063/1.366730 ◽

1998 ◽

Vol 83 (1) ◽

pp. 171-173 ◽

Cited By ~ 27

Author(s):

Jingyun Huang ◽

Zhizhen Ye ◽

Huanming Lu ◽

Duanlin Que

Keyword(s):

Layer Thickness ◽

Thermal Strain ◽

Critical Layer ◽

Critical Layer Thickness ◽

Strained Layer

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Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy

Applied Physics Letters ◽

10.1063/1.99471 ◽

1988 ◽

Vol 52 (5) ◽

pp. 377-379 ◽

Cited By ~ 155

Author(s):

P. L. Gourley ◽

I. J. Fritz ◽

L. R. Dawson

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Strained Layer

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Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

Journal of Electronic Materials ◽

10.1007/bf02817701 ◽

1993 ◽

Vol 22 (11) ◽

pp. 1365-1368 ◽

Cited By ~ 5

Author(s):

C. A. Wang ◽

S. H. Groves ◽

J. H. Reinold ◽

D. R. Calawa

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Multiple Quantum Wells ◽

Critical Layer ◽

Multiple Quantum ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Double Crystal ◽

X Ray ◽

Strained Layer

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Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices

Applied Physics Letters ◽

10.1063/1.95783 ◽

1985 ◽

Vol 46 (10) ◽

pp. 967-969 ◽

Cited By ~ 190

Author(s):

I. J. Fritz ◽

S. T. Picraux ◽

L. R. Dawson ◽

T. J. Drummond ◽

W. D. Laidig ◽

...

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Strained Layer ◽

Strained Layer Superlattices

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Surface roughening transition and critical layer thickness in strained‐layer heteroepitaxy of EuTe on PbTe (111)

Applied Physics Letters ◽

10.1063/1.111374 ◽

1994 ◽

Vol 64 (22) ◽

pp. 2970-2972 ◽

Cited By ~ 23

Author(s):

G. Springholz ◽

N. Frank ◽

G. Bauer

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

Surface Roughening ◽

Critical Layer Thickness ◽

Strained Layer ◽

Roughening Transition

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Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

Applied Physics Letters ◽

10.1063/1.96206 ◽

1985 ◽

Vol 47 (3) ◽

pp. 322-324 ◽

Cited By ~ 1380

Author(s):

R. People ◽

J. C. Bean

Keyword(s):

Layer Thickness ◽

Lattice Mismatch ◽

Critical Layer ◽

Critical Layer Thickness ◽

Strained Layer

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Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy

Applied Physics Letters ◽

10.1063/1.98746 ◽

1987 ◽

Vol 51 (14) ◽

pp. 1080-1082 ◽

Cited By ~ 156

Author(s):

I. J. Fritz

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Strained Layer ◽

Experimental Resolution

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Enhanced nonradiative recombination in Al x Ga1−x N-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction

Applied Physics Express ◽

10.35848/1882-0786/abe658 ◽

2021 ◽

Vol 14 (3) ◽

pp. 031007

Author(s):

Shuhei Ichikawa ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Nonradiative Recombination ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray

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