Surface roughening transition and critical layer thickness in strained‐layer heteroepitaxy of EuTe on PbTe (111)

1994 ◽  
Vol 64 (22) ◽  
pp. 2970-2972 ◽  
Author(s):  
G. Springholz ◽  
N. Frank ◽  
G. Bauer
Keyword(s):  
Layer Thickness ◽  
Critical Layer ◽  
Surface Roughening ◽  
Critical Layer Thickness ◽  
Strained Layer ◽  
Roughening Transition

Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy

1988 ◽  
Vol 52 (5) ◽  
pp. 377-379 ◽  
Author(s):  
P. L. Gourley ◽  
I. J. Fritz ◽  
L. R. Dawson
Keyword(s):  
Layer Thickness ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Strained Layer

Epitaxial Growth of Eute on Pbte (111) Influenced by Strain-Induced Coherent 3D Islanding

1993 ◽  
Vol 317 ◽  
Author(s):  
G. Springholz ◽  
G. Bauer ◽  
K. Schilcher
Keyword(s):  
Substrate Temperature ◽  
Layer Thickness ◽  
Flux Ratio ◽  
High Energy ◽  
Critical Layer ◽  
Ex Situ ◽  
Surface Roughening ◽  
Heteroepitaxial Growth ◽  
Surface Kinetics ◽  
Critical Layer Thickness

ABSTRACTEuTe on PbTe is an example of a strained layer heteroepitaxial system with a moderate lattice-Mismatch of 2%. Using reflection high-energy electron diffraction (RHEED), the phase diagram of heteroepitaxial growth of EuTe on PbTe (111) by molecular beam epitaxy was established, indicating that only in a narrow regime of growth conditions does two dimensional layer-by-layer growth occur. Using in situ RHEED, combined with ex situ atomic force Microscopy, the evolution of the surface morphology during heteroepitaxial growth was investigated. It is found that at the critical layer thickness an abrupt surface roughening occurs. Studying the dependence of this surface roughening transition on substrate temperature and on the Eu-to-Te2 beam flux ratio used for growth, the critical layer thickness is found to decrease strongly as the surface kinetics are enhanced, even if the substrate temperature is kept constant. These results indicate that the surface roughening is driven only by the surface kinetics, which strongly supports the model of strain relaxation by coherent three dimensional islanding.

Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices

1985 ◽  
Vol 46 (10) ◽  
pp. 967-969 ◽  
Author(s):  
I. J. Fritz ◽  
S. T. Picraux ◽  
L. R. Dawson ◽  
T. J. Drummond ◽  
W. D. Laidig ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Strained Layer ◽  
Strained Layer Superlattices
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