Production of Ce negative ions in a Cs sputter ion source

2000 ◽  
Vol 71 (2) ◽  
pp. 955-957 ◽  
Author(s):  
Y. Saitoh ◽  
B. Yotsombat ◽  
K. Mizuhashi ◽  
S. Tajima
Keyword(s):  
Negative Ions ◽  
Ion Source

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

Negative Ionen durch Elektronenstoß aus organischen Nitroverbindungen, Äthylnitrit und Äthylnitrat

1967 ◽  
Vol 22 (5) ◽  
pp. 700-704
Author(s):  
K. Jäger ◽  
A. Henglein
Keyword(s):  
Electron Impact ◽  
Negative Ions ◽  
Molecular Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Electron Affinities ◽  
Low Intensity ◽  
Ion Molecule Reactions ◽  
Fragment Ions ◽  
Product Ions

Negative ion formation by electron impact has been studied in nitromethane, nitroethane, nitrobenzene, tetranitromethane, ethylnitrite and ethylnitrate. Appearance potentials, ionization efficiency curves and kinetic energies of negative ions were measured by using a Fox ion source. The electron affinities of C2H5O and of C (NO2)3 are discussed as well as the energetics of processes which yield NO2-. The electron capture in nitrobenzene and tetranitromethane leads to molecular ions [C6H5NO2~ in high, C (NO2)4 in very low intensity] besides many fragment ions. A number of product ions from negative ion-molecule reactions has also been found.

The Munich laser-ion-source for use of negative ions

1992 ◽  
Author(s):  
T. Henkelmann ◽  
G. Korschinek
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Laser Ion Source

Ion Source for Low‐Energy Negative Ions

1962 ◽  
Vol 33 (4) ◽  
pp. 445-447 ◽  
Author(s):  
E. E. Muschlitz ◽  
H. D. Randolph ◽  
J. N. Ratti
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Low Energy

scholarly journals Numerical Modeling of Space–Time Characteristics of Plasma Initialization in a Secondary Arc

Energies ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 2128
Author(s):  
Jinsong Li ◽  
Hua Yu ◽  
Min Jiang ◽  
Hong Liu ◽  
Guanliang Li
Keyword(s):  
Numerical Model ◽  
Electric Field ◽  
Single Phase ◽  
Short Circuit ◽  
Negative Ions ◽  
Ion Source ◽  
Simulation Software ◽  
Discharge Process ◽  
Field Variation ◽  
Surface Charges

A numerical model based on the finite element simulation software COMSOL was developed to investigate the secondary arc that can limit the success of single-phase auto-reclosure solutions to the single-phase-to-ground fault. Partial differential equations accounting for variation of densities of charge particles (electrons, positive and negative ions) were coupled with Poisson’s equation to consider the effects of space and surface charges on the electric field. An experiment platform was established to verify the numerical model. The brightness distribution of the experimental short-circuit arc was basically consistent with the predicted distribution of electron density, demonstrating that the simulation was effective. Furthermore, the model was used to assess the particle density distribution, electric field variation, and time dependence of ion reactions during the short-circuit discharge. Results showed that the ion concentration was higher than the initial level after the short-circuit discharge, which is an important reason for inducing the subsequent secondary arc. The intensity of the spatial electric field was obviously affected by the high-voltage electrode at the end regions, and the intermediate region was mainly affected by the particle reaction. The time correspondence between the detachment reaction and the ion source generated in the short-circuit discharge process was basically consistent, and the detachment reactions were mainly concentrated in the middle area and near the negative electrode. The research elucidates the relevant plasma process of the secondary arc and will contribute to the suppression of it.

Transport of negative ions produced at a barium surface located within a multicusp ion source

1989 ◽  
Vol 60 (4) ◽  
pp. 539-546 ◽  
Author(s):  
C. F. A. van Os ◽  
A. W. Kleyn ◽  
L. M. Lea ◽  
A. J. T. Holmes ◽  
P. W. van Amersfoort
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Multicusp Ion Source

Extraction of negative ions with DuoPIGatron ion source

2007 ◽  
Vol 261 (1-2) ◽  
pp. 49-51 ◽  
Author(s):  
Bum-Sik Park ◽  
Jae-Sang Lee ◽  
Kye-Ryung Kim ◽  
Byung-Ho Choi
Keyword(s):  
Negative Ions ◽  
Ion Source

22 A beam production of the uniform negative ions in the JT-60 negative ion source

2015 ◽  
Vol 96-97 ◽  
pp. 616-619 ◽  
Author(s):  
Masafumi Yoshida ◽  
Masaya Hanada ◽  
Atsushi Kojima ◽  
Mieko Kashiwagi ◽  
Larry R. Grisham ◽  
...  
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Beam Production
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