scholarly journals Volume production of negative ions in the reflex-type ion source

1982 ◽  
Author(s):  
K. Jimbo
1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.


2000 ◽  
Vol 71 (2) ◽  
pp. 955-957 ◽  
Author(s):  
Y. Saitoh ◽  
B. Yotsombat ◽  
K. Mizuhashi ◽  
S. Tajima
Keyword(s):  

1967 ◽  
Vol 22 (5) ◽  
pp. 700-704
Author(s):  
K. Jäger ◽  
A. Henglein

Negative ion formation by electron impact has been studied in nitromethane, nitroethane, nitrobenzene, tetranitromethane, ethylnitrite and ethylnitrate. Appearance potentials, ionization efficiency curves and kinetic energies of negative ions were measured by using a Fox ion source. The electron affinities of C2H5O and of C (NO2)3 are discussed as well as the energetics of processes which yield NO2-. The electron capture in nitrobenzene and tetranitromethane leads to molecular ions [C6H5NO2~ in high, C (NO2)4 in very low intensity] besides many fragment ions. A number of product ions from negative ion-molecule reactions has also been found.


2012 ◽  
Vol 61 (18) ◽  
pp. 185204
Author(s):  
Yang Chao ◽  
Liu Da-Gang ◽  
Xia Meng-Zhong ◽  
Wang Hui-Hui ◽  
Wang Xiao-Min ◽  
...  

1992 ◽  
Author(s):  
T. Henkelmann ◽  
G. Korschinek

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