Ion Source for Low‐Energy Negative Ions

1962 ◽  
Vol 33 (4) ◽  
pp. 445-447 ◽  
Author(s):  
E. E. Muschlitz ◽  
H. D. Randolph ◽  
J. N. Ratti
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Low Energy

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Low-energy, high-current, ion source with cold electron emitter

2012 ◽  
Vol 83 (2) ◽  
pp. 02B301
Author(s):  
A. V. Vizir ◽  
M. V. Shandrikov ◽  
G. Yu. Yushkov ◽  
E. M. Oks
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
Cold Electron ◽  
High Current ◽  
Electron Emitter

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

Gridless, very low energy, high-current, gaseous ion source

2010 ◽  
Vol 81 (2) ◽  
pp. 02B307 ◽  
Author(s):  
A. V. Vizir ◽  
M. V. Shandrikov ◽  
G. Yu. Yushkov ◽  
E. M. Oks
Keyword(s):  
Ion Source ◽  
Low Energy ◽  
High Current
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