The Munich laser-ion-source for use of negative ions

1992 ◽  
Author(s):  
T. Henkelmann ◽  
G. Korschinek
Keyword(s):  
Negative Ions ◽  
Ion Source ◽  
Laser Ion Source

Resonant Ionization Laser Ion Source for Radioactive Ion Beams

2009 ◽  
Author(s):  
Y. Liu ◽  
J. R. Beene ◽  
T. Gottwald ◽  
C. C. Havener ◽  
C. Mattolat ◽  
...  
Keyword(s):  
Ion Beams ◽  
Ion Source ◽  
Radioactive Ion Beams ◽  
Laser Ion Source ◽  
Resonant Ionization

Laser ion source for ITEP–TWAC project

2005 ◽  
Vol 160 (10-12) ◽  
pp. 553-555
Author(s):  
A. Balabaev ◽  
S. Kondrashev ◽  
B. Sharkov ◽  
A. Vasiliev
Keyword(s):  
Ion Source ◽  
Laser Ion Source

Laser ion source for heavy ion accelerators

1992 ◽  
Vol 63 (4) ◽  
pp. 2841-2843 ◽  
Author(s):  
B. Yu. Sharkov ◽  
A. V. Shumshurov ◽  
V. P. Dubenkow ◽  
O. B. Shamaev ◽  
A. A. Golubev
Keyword(s):  
Heavy Ion ◽  
Ion Source ◽  
Laser Ion Source

scholarly journals ISOLDE target and ion source chemistry

2001 ◽  
Vol 89 (11-12) ◽  
Author(s):  
U. Köster
Keyword(s):  
Liquid Metals ◽  
Molecular Form ◽  
Isotope Separation ◽  
Thick Target ◽  
Ion Source ◽  
Resonance Ionization ◽  
Surface Ionization ◽  
Laser Ion Source ◽  
Reaction Products ◽  
On Line

For the production of radioactive ion beams by means of the ISOL (isotope separation on-line) method in which the nuclei of interest are stopped in a thick target, chemistry plays a crucial role. It serves to separate the nuclear reaction products in atomic or molecular form from the bulk target and to transfer them efficiently to an ion source. This article gives an overview of ISOLDE radiochemical methods where targets (liquid metals, solid metals, carbides and oxides) and ion sources are optimized with respect to efficiency, speed and chemical selectivity. Rather pure beams of non-metals and volatile metals can be obtained with a temperature-controlled transfer line acting as thermo-chromatograph. For less volatile metals the temperature of the target and ion source units needs to be kept as high as possible, but a selective ion source can be used: positive surface ionization for metals with ionization potentials below about 6 eV and the RILIS (resonance ionization laser ion source) technique for most other metals.

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

Generation of intense beams of Pb4+–Pb10+ ions in a laser ion source (abstract)

2002 ◽  
Vol 73 (2) ◽  
pp. 706-706
Author(s):  
S. Kondrashev ◽  
N. Mescheryakov ◽  
B. Sharkov ◽  
A. Shumshurov ◽  
A. Balabaev ◽  
...  
Keyword(s):  
Ion Source ◽  
Laser Ion Source
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