Transport of negative ions produced at a barium surface located within a multicusp ion source

1989 ◽  
Vol 60 (4) ◽  
pp. 539-546 ◽  
Author(s):  
C. F. A. van Os ◽  
A. W. Kleyn ◽  
L. M. Lea ◽  
A. J. T. Holmes ◽  
P. W. van Amersfoort
1992 ◽  
Vol 63 (4) ◽  
pp. 2447-2449 ◽  
Author(s):  
H. Yamaoka ◽  
M. Wada ◽  
M. Sasao ◽  
X. M. Tong ◽  
J. Fujita

1982 ◽  
Vol 53 (9) ◽  
pp. 1429-1433 ◽  
Author(s):  
K. W. Ehlers ◽  
K. N. Leung

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.


1987 ◽  
Vol 59 (7) ◽  
pp. 787-790 ◽  
Author(s):  
K. N. Leung ◽  
W. B. Kunkel

2011 ◽  
Vol 98 (12) ◽  
pp. 121501 ◽  
Author(s):  
Hualin Zhan ◽  
Chundong Hu ◽  
Yahong Xie ◽  
Bin Wu ◽  
Jinfang Wang ◽  
...  

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