(111)A CdTe rotation growth on (111) Si with low growth rate by metalorganic chemical vapor deposition

1995 ◽  
Vol 67 (21) ◽  
pp. 3138-3140 ◽  
Author(s):  
H. Ebe ◽  
Y. Nishijima
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1219-L1220 ◽  
Author(s):  
Masao Kawaguchi ◽  
Tomoyuki Miyamoto ◽  
Eric Gouardes ◽  
Dietmar Schlenker ◽  
Takashi Kondo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Metalorganic Chemical

Cation Source Dependence of $\bf Ga_{0.5}In_{0.5}P$ Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 2, No. 6B) ◽  
pp. L832-L833
Author(s):  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
Kun-Chuan Lin ◽  
Shih-Hsiung Chan ◽  
Horng-Dar Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

The growth rate of CdxHg1−xTe grown by metalorganic chemical vapor deposition

1992 ◽  
Vol 117 (1-4) ◽  
pp. 44-48 ◽  
Author(s):  
H. Takada ◽  
T. Murakami ◽  
M. Suita ◽  
K. Yasumura ◽  
Y. Endo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Influence of Substrate Misorientation on Facet Formation in Selective Area Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 441 ◽  
Author(s):  
Hyunchol Shin ◽  
Young-Se Kwon
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Rate Enhancement ◽  
Selective Area ◽  
Influence Of Substrate ◽  
Facet Formation ◽  
Metalorganic Chemical

AbstractWe have investigated the influence of substrate misorientation on facet formation in selective area metalorganic chemical vapor deposition (MOCVD) on GaAs (001) vicinal substrates. Macroscopic steps several hundred angstroms high were generated on the epitaxial layer over triangular voids where the voids were formed using the conditions of the reverse–mesa–shaped facets. AFM observations revealed that the macroscopic steps were formed by the combined effects of the growth rate enhancement and the development of the exact (001) crystallographic surface. Through removing the growth rate enhancement effect from the experiment results, it could be expected that the exact (001) surface developed only on the side for which the (001) surface was exposed because the surface energy of a low index plane was lower than that of a misoriented high index plane.

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