In situ normal incidence reflectance study on the effect of growth rate of nucleation layer on GaN by metalorganic chemical vapor deposition

2000 ◽  
Vol 18 (1) ◽  
pp. 140 ◽  
Author(s):  
Dong-Joon Kim ◽  
Yong-Tae Moon ◽  
Kwang-Soon Ahn ◽  
Seong-Ju Park
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Incidence ◽  
Nucleation Layer ◽  
Metalorganic Chemical

Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1219-L1220 ◽  
Author(s):  
Masao Kawaguchi ◽  
Tomoyuki Miyamoto ◽  
Eric Gouardes ◽  
Dietmar Schlenker ◽  
Takashi Kondo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Metalorganic Chemical

In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Phase ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.

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