Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates

1996 ◽  
Vol 69 (6) ◽  
pp. 815-817 ◽  
Author(s):  
Seong‐Il Kim ◽  
Moo‐Sung Kim ◽  
Yong Kim ◽  
Chang Sik Son ◽  
Seong‐Min Hwang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Patterned Substrates ◽  
Lateral Growth Rate ◽  
Metalorganic Chemical

Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1219-L1220 ◽  
Author(s):  
Masao Kawaguchi ◽  
Tomoyuki Miyamoto ◽  
Eric Gouardes ◽  
Dietmar Schlenker ◽  
Takashi Kondo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Metalorganic Chemical

Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)

2007 ◽  
Vol 1040 ◽  
Author(s):  
Vibhu Jindal ◽  
James Grandusky ◽  
Neeraj Tripathi ◽  
Mihir Tungare ◽  
Fatemeh Shahedipour-Sandvik ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Structural Defects ◽  
Lateral Growth ◽  
High Quality ◽  
Metalorganic Chemical

AbstractHigh quality homoepitaxial growth of m-plane GaN films on freestanding m-plane HVPE GaN substrates has been performed using metalorganic chemical vapor deposition. For this a large growth space was studied. Large areas of no-nucleation along with presence of high density of defects were observed when layers were grown under growth conditions for c-plane GaN. It is believed that these structural defects were in large part due to the low lateral growth rates as well as unequal lateral growth rates in a- and c- crystallographic directions. To achieve high quality, fully coalesced epitaxial layers, growth conditions were optimized with respect to growth temperature, V/III ratios and reactor pressure. Higher growth temperatures led to smoother surfaces due to increased surface diffusion of adatoms. Overall, growth at higher temperature and lower V/III ratio decreased the surface roughness and resulted in better optical properties as observed by photoluminescence. Although optimization resulted in highly smooth layers, some macroscopic defects were still observed on the epi-surface as a result of contamination and subsurface damage remaining on bulk substrates possibly due to polishing. Addition of a step involving annealing of the bulk substrate under H2: N2 environment, prior to growth, drastically reduced such macroscopic defects.

Cation Source Dependence of $\bf Ga_{0.5}In_{0.5}P$ Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 2, No. 6B) ◽  
pp. L832-L833
Author(s):  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
Kun-Chuan Lin ◽  
Shih-Hsiung Chan ◽  
Horng-Dar Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process

1998 ◽  
Vol 537 ◽  
Author(s):  
H. Marchand ◽  
J.P. Ibbetson ◽  
P.T. Fini ◽  
X.H. Wu ◽  
S. Keller ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Lateral Growth ◽  
Lateral Epitaxial Overgrowth ◽  
Step Process ◽  
Vertical Growth Rate ◽  
Lateral Growth Rate

AbstractWe demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from <1010>-oriented stripes is initiated at a low V/II1 ratio to produce smooth, vertical {1120} sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the {1101} facets is inhibited using this two-step process, and that it is possible to maintain the {1120} sidewalls while achieving a large lateral growth rate. The ratio of lateral to vertical growth rate has been increased by up to factor of 2.6 using this approach relative to identical growth conditions without the initiation at low V/III ratio. The effect of lateral growth rate on the structural properties of the stripes is discussed.

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