Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 22 (8) ◽  
pp. 865-871 ◽  
Author(s):  
K. Shigenaka ◽  
L. Sugiura ◽  
F. Nakata ◽  
K. Hirahara
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Partial Pressure ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Twin Formation ◽  
Metalorganic Chemical

Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1219-L1220 ◽  
Author(s):  
Masao Kawaguchi ◽  
Tomoyuki Miyamoto ◽  
Eric Gouardes ◽  
Dietmar Schlenker ◽  
Takashi Kondo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Metalorganic Chemical

Cation Source Dependence of $\bf Ga_{0.5}In_{0.5}P$ Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 2, No. 6B) ◽  
pp. L832-L833
Author(s):  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
Kun-Chuan Lin ◽  
Shih-Hsiung Chan ◽  
Horng-Dar Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical
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