The effect of high magnetic fields on junction field effect transistor device performance

1998 ◽  
Vol 69 (1) ◽  
pp. 319-320 ◽  
Author(s):  
J. R. Bodart ◽  
B. M. Garcia ◽  
L. Phelps ◽  
N. S. Sullivan ◽  
W. G. Moulton ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Magnetic Fields ◽  
Device Performance ◽  
Effect Transistor

A spin field effect transistor using stray magnetic fields

2009 ◽  
Vol 53 (9) ◽  
pp. 1016-1019 ◽  
Author(s):  
Hyun Cheol Koo ◽  
Jonghwa Eom ◽  
Joonyeon Chang ◽  
Suk-Hee Han
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Spin Field ◽  
Effect Transistor

scholarly journals Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Film Growth ◽  
Drain Current ◽  
Device Performance ◽  
Wetting Layer ◽  
Si Substrate ◽  
Effect Transistor ◽  
Gan Heterostructure

A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET), fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

2015 ◽  
Vol 118 (22) ◽  
pp. 224501 ◽  
Author(s):  
A. Mukhopadhyay ◽  
L. Banerjee ◽  
A. Sengupta ◽  
H. Rahaman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Device Performance ◽  
Stacking Order ◽  
Black Phosphorene ◽  
Effect Transistor

Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

2011 ◽  
Vol 88 (12) ◽  
pp. 3424-3427 ◽  
Author(s):  
Won-Ho Choi ◽  
Jungwoo Oh ◽  
Ook-Sang Yoo ◽  
In-Shik Han ◽  
Min-Ki Na ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Device Performance ◽  
Effect Transistor

scholarly journals Plasma waves Terahertz detection by field effect transistor in Quantinzing magnetic fields

2009 ◽  
Vol 193 ◽  
pp. 012083
Author(s):  
S Boubanga-Tombet ◽  
F Teppe ◽  
W Knap ◽  
K Karpierz ◽  
J Lusakowski ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Plasma Waves ◽  
Terahertz Detection ◽  
Effect Transistor
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