Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier

1997 ◽  
Vol 82 (4) ◽  
pp. 1925-1929 ◽  
Author(s):  
Edward Daw ◽  
Richard F. Bradley
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Noise Temperature ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Magnetic Fields ◽  
Effect Transistor ◽  
Noise Amplifier

The effect of high magnetic fields on junction field effect transistor device performance

1998 ◽  
Vol 69 (1) ◽  
pp. 319-320 ◽  
Author(s):  
J. R. Bodart ◽  
B. M. Garcia ◽  
L. Phelps ◽  
N. S. Sullivan ◽  
W. G. Moulton ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Magnetic Fields ◽  
Device Performance ◽  
Effect Transistor

A W-band low-noise amplifier with 22K noise temperature

2009 ◽  
Author(s):  
Eric W. Bryerton ◽  
Xiaobing Mei ◽  
Young-Min Kim ◽  
William Deal ◽  
Wayne Yoshida ◽  
...  
Keyword(s):  
Noise Temperature ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
W Band ◽  
Noise Amplifier

A spin field effect transistor using stray magnetic fields

2009 ◽  
Vol 53 (9) ◽  
pp. 1016-1019 ◽  
Author(s):  
Hyun Cheol Koo ◽  
Jonghwa Eom ◽  
Joonyeon Chang ◽  
Suk-Hee Han
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Spin Field ◽  
Effect Transistor

Frequency-shift keyed generation with an optically controlled GaAs field-effect transistor in a surface-acoustic-wave oscillator circuit

1987 ◽  
Vol 65 (8) ◽  
pp. 929-936
Author(s):  
O. Berolo
Keyword(s):  
Acoustic Wave ◽  
Frequency Shift ◽  
Surface Acoustic Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Open Circuit ◽  
Low Noise ◽  
Optical Modulator ◽  
Oscillator Circuit ◽  
Effect Transistor

A prototype circuit for potential optical integration was developed and evaluated for the generation of frequency-shift keyed (FSK) signals by simultaneously exploiting surface-acoustic wave (SAW) technology and the optical response of the GaAs field-effect transistor (FET).A SAW delay line to be utilized in the feedback path of an oscillator circuit was designed for operation at the fundamental frequency of 111 MHz and operated at its 12th harmonic (1.33 GHz). A low-noise FET was incorporated into the circuit in series with the SAW delay, and a low-power He:Ne laser was focussed through an optical modulator onto the FET structure. The gate bias, which controls the phase shift in the feedback loop of the oscillator, was applied via the open-circuit photovoltage induced at the Schottky-barrier junction of the FET.The optical modulator was driven by a pseudorandom bit generator to obtain FSK generation by the oscillator circuit. Results of the frequency spectrum of the oscillator signal as a function of bit rate and light intensity on the FET were obtained. The successful performance of the circuit indicated that integration of all these elements on GaAs would yield a useful device for FSK signal generation.Un prototype de circuit pour intégration optique potentielle a été développé et évalué pour la génération de signaux FSK (frequency-shift keyed), en exploitant simultanéement la technologie des ondes acoustiques de surface et la réponse optique du transistor GaAs à effet de champ.

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

1982 ◽  
Vol 41 (7) ◽  
pp. 633-635 ◽  
Author(s):  
M. Feng ◽  
V. K. Eu ◽  
I. J. D’Haenens ◽  
M. Braunstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Effect Transistor

Low noise amplifier for radio astronomy

2013 ◽  
Vol 5 (4) ◽  
pp. 453-461 ◽  
Author(s):  
David M.P. Smith ◽  
Laurens Bakker ◽  
Roel H. Witvers ◽  
Bert E.M. Woestenburg ◽  
Keith D. Palmer
Keyword(s):  
Printed Circuit Board ◽  
Noise Figure ◽  
Ground Plane ◽  
Noise Temperature ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Circuit Board ◽  
Manufacturing Techniques ◽  
Noise Amplifier ◽  
Better Than

A compact, microstrip, two-stage, room temperature, single-ended low noise amplifier (LNA) is designed using commercial components for Aperture Tile in Focus (APERTIF), a square kilometre array (SKA) pathfinder project. Various techniques are investigated to insert inductance between the source pad of the package and the ground plane of the printed circuit board (PCB), with the chosen design able to do this using standard manufacturing techniques. The desired noise temperature of 25 K (noise figure (NF) of 0.36 dB) is met over the 1.0–1.8 GHz band, with an input return loss better than 10 dB.

scholarly journals Plasma waves Terahertz detection by field effect transistor in Quantinzing magnetic fields

2009 ◽  
Vol 193 ◽  
pp. 012083
Author(s):  
S Boubanga-Tombet ◽  
F Teppe ◽  
W Knap ◽  
K Karpierz ◽  
J Lusakowski ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Plasma Waves ◽  
Terahertz Detection ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document