Degraded noise characteristics of submicrometer area field effect transistors subjected to plasma etching and Fowler–Nordheim stress

1995 ◽  
Vol 67 (19) ◽  
pp. 2860-2862 ◽  
Author(s):  
Scott T. Martin ◽  
G. P. Li ◽  
Eugene Worley ◽  
Joe White
Keyword(s):  
Plasma Etching ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Noise Characteristics

Elevated Temperature Operation of 4H-SiC Nanoribbon Field Effect Transistors

2015 ◽  
Vol 15 (10) ◽  
pp. 7551-7554 ◽  
Author(s):  
Min Seok Kang ◽  
Susanna Yu ◽  
Sang Mo Koo
Keyword(s):  
Elevated Temperature ◽  
Plasma Etching ◽  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Top Down ◽  
Channel Mobility ◽  
Channel Thickness ◽  
Effective Channel

We fabricated 4H-SiC nanoribbon field effect transistors (FETs) of various channel thickness (tch) of 100∼500 nm by a “top–down” approach, using a lithography and plasma etching process. We studied the dependence of the device transfer characteristics on the channel geometry. This demonstrated that fabricated SiC nanoribbon FETs with a tch of 100 nm show normally-on characteristics, and have a threshold voltage of −12 V, and a maximum transconductance value of 8.8 mS, which shows improved drain current degradation of the SiC nanoribbon FETs with tch =100 nm at elevated temperature. This can be attributed to the improved heat dissipation, enhanced channel mobility, and together with widening of effective channel thickness depletion induced.

Low-frequency noise characteristics of AlInAs/GaInAs modulation-doped field-effect transistors

1989 ◽  
Vol 25 (16) ◽  
pp. 1039 ◽  
Author(s):  
G. Sasaki ◽  
W.-P. Hong ◽  
G.-K. Chang ◽  
R. Bhat ◽  
F.S. Turco ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Plasma Damage Effects in InAlN Field Effect Transistors

1997 ◽  
Vol 468 ◽  
Author(s):  
F. Ren ◽  
J. R. Lothian ◽  
Y. K. Chen ◽  
J. D. Mackenzie ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Plasma Chemistry ◽  
Hydrogen Passivation ◽  
Plasma Damage ◽  
Ion Energy ◽  
Deep Acceptor ◽  
Preferential Loss ◽  
Etched Surface

ABSTRACTDuring gate mesa plasma etching of InN/InAlN field effect transistors the apparent conductivity in the channel can be either increased through three different mechanisms. If hydrogen is part of the plasma chemistry, hydrogen passivation of the shallow donors in the InAlN can occur, we find diffusion depths for 2H of ≥ 0.5 micron in 30 mins at 200°C. The hydrogen remains in the material until temperatures ≥ 700°C Energetic ion bombardment in SF6/O2 or BCl/Ar plasmas also compensates the doping in the InAlN by creation of deep acceptor states. Finally the conductivity of the immediate InAlN surface can be increased by preferential loss of N during BCl3 plasma etching, leading to poor rectifying contact characteristics when the gate metal is deposited on this etched surface. Careful control of plasma chemistry, ion energy and stoichiometry of the etched surface are necessary for acceptable pinch-off characteristics.

Sign in / Sign up

Export Citation Format

Share Document