Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

1997 ◽  
Vol 15 (3) ◽  
pp. 616-621 ◽  
Author(s):  
John V. Hryniewicz ◽  
Y. J. Chen ◽  
Shih Hsiang Hsu ◽  
Chau-Han D. Lee ◽  
Gyorgy A. Porkolab
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Etching System

Ion Beam Etching System for Mercury Cadmium Telluride and III-V Compound Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick. W. Leech ◽  
Patrick Bond
Keyword(s):  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Ion Source ◽  
Rotating Platform ◽  
Ion Beam Etching ◽  
Wide Range ◽  
Wet Chemical ◽  
Etching System

AbstractThis paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows.

Low‐energy (5

1995 ◽  
Vol 13 (6) ◽  
pp. 2836-2842 ◽  
Author(s):  
Y.‐W. Kim ◽  
I. Petrov ◽  
H. Ito ◽  
J. E. Greene
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Low Energy ◽  
High Brightness ◽  
Ion Beam Deposition ◽  
Beam Deposition

Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ecr Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam ◽  
Reactive Ion Beam Etching

Ion Beam Etching of Biological Material in the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 10-11
Author(s):  
Patrick Echlin ◽  
David Kynaston ◽  
Paul M. Knights
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Biological Material ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Dynamic Experiments ◽  
First Time ◽  
Scanning Electron

An ion source has been designed to operate in the chamber of the Stereoscan scanning electron microscope and provides facilities for etching specimens in situ. The source is a demountable cold cathode discharge type requiring only simple control.The ion beam described above has been used to progressively etch away hard or resilient biological material. This is the first time that ion beam etching of botanical specimens has been followed inside the scanning microscope, and marks the beginning of a range of dynamic experiments using this form of instrumentation.

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