Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal–oxide–semiconductor transistors

D. Bauza

doi:10.1063/1.1595138

Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.1595138 ◽

2003 ◽

Vol 94 (5) ◽

pp. 3239-3248 ◽

Cited By ~ 21

Author(s):

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Rigorous Analysis ◽

Trap Concentration ◽

Charge Pumping ◽

Energy Profiles

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Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method

Journal of Applied Physics ◽

10.1063/1.361786 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4187 ◽

Cited By ~ 61

Author(s):

Y. Maneglia ◽

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Concentration Profiles ◽

Trap Concentration ◽

Charge Pumping ◽

Oxide Trap

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A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors

Review of Scientific Instruments ◽

10.1063/1.1144713 ◽

1994 ◽

Vol 65 (6) ◽

pp. 2141-2142 ◽

Cited By ~ 14

Author(s):

Jean‐Luc Autran ◽

Bernard Balland

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Accurate Determination ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping

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A charge pumping method for rapid determination of interface‐trap parameters in metal‐oxide‐semiconductor devices

Review of Scientific Instruments ◽

10.1063/1.1142575 ◽

1992 ◽

Vol 63 (5) ◽

pp. 3188-3190 ◽

Cited By ~ 5

Author(s):

Wenliang Chen ◽

Artur Balasinski ◽

T.‐P. Ma

Keyword(s):

Metal Oxide ◽

Rapid Determination ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping ◽

A Charge

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A simple technique for determining the interface‐trap distribution of submicron metal‐oxide‐semiconductor transistors by the charge pumping method

Journal of Applied Physics ◽

10.1063/1.343034 ◽

1989 ◽

Vol 65 (3) ◽

pp. 1358-1360 ◽

Cited By ~ 17

Author(s):

F. Hofmann ◽

W. H. Krautschneider

Keyword(s):

Metal Oxide ◽

Simple Technique ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

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Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.4798536 ◽

2013 ◽

Vol 102 (12) ◽

pp. 123505 ◽

Cited By ~ 6

Author(s):

B. R. Tuttle ◽

X. Shen ◽

S. T. Pantelides

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Cited By ~ 4

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Charge Pumping

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Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4393 ◽

1993 ◽

Vol 32 (Part 1, No. 10) ◽

pp. 4393-4397 ◽

Cited By ~ 17

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Subthreshold Slope ◽

Effect Transistor

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

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