Electron‐cyclotron‐resonant microwave plasma system for thin‐film deposition

1986 ◽  
Vol 57 (3) ◽  
pp. 493-496 ◽  
Author(s):  
S. R. Mejia ◽  
R. D. McLeod ◽  
K. C. Kao ◽  
H. C. Card
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Thin Film Deposition ◽  
Electron Cyclotron ◽  
Film Deposition ◽  
Plasma System

Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Plasma Chemistry ◽  
High Growth ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
High Growth Rate ◽  
Film Deposition ◽  
Dual Mode

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

scholarly journals Radio frequency and microwave plasma for optical thin-film deposition

1990 ◽  
Author(s):  
Juergen Otto ◽  
Volker Paquet ◽  
Ralf T. Kersten ◽  
Heinz-Werner Etzkorn ◽  
Raymond M. Brusasco ◽  
...  
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Microwave Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optical Thin Film
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