An investigation of electromagnetic field patterns during microwave plasma diamond thin film deposition

1990 ◽  
Vol 8 (3) ◽  
pp. 2124-2128 ◽  
Author(s):  
J. Zhang ◽  
B. Huang ◽  
D. K. Reinhard ◽  
J. Asmussen
Keyword(s):  
Thin Film ◽  
Electromagnetic Field ◽  
Microwave Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Field Patterns ◽  
Diamond Thin Film

CCl Radicals As a Carbon Source for Diamond Thin Film Deposition

2014 ◽  
Vol 5 (3) ◽  
pp. 481-484 ◽  
Author(s):  
Qi An ◽  
Mu-Jeng Cheng ◽  
William A. Goddard ◽  
Andres Jaramillo-Botero
Keyword(s):  
Thin Film ◽  
Carbon Source ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Thin Film

Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Plasma Chemistry ◽  
High Growth ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
High Growth Rate ◽  
Film Deposition ◽  
Dual Mode

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

Electron‐cyclotron‐resonant microwave plasma system for thin‐film deposition

1986 ◽  
Vol 57 (3) ◽  
pp. 493-496 ◽  
Author(s):  
S. R. Mejia ◽  
R. D. McLeod ◽  
K. C. Kao ◽  
H. C. Card
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Thin Film Deposition ◽  
Electron Cyclotron ◽  
Film Deposition ◽  
Plasma System

scholarly journals Radio frequency and microwave plasma for optical thin-film deposition

1990 ◽  
Author(s):  
Juergen Otto ◽  
Volker Paquet ◽  
Ralf T. Kersten ◽  
Heinz-Werner Etzkorn ◽  
Raymond M. Brusasco ◽  
...  
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Microwave Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optical Thin Film

Diamond thin film deposition on amorphous diamond film surface

1994 ◽  
Author(s):  
Jintian He ◽  
Da-jun Liu ◽  
Xiaoping Wang ◽  
Binglin Zhang ◽  
Jianen Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Diamond Film ◽  
Film Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Thin Film

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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