Oxide‐semiconductor interface roughness and electrical properties of polycrystalline silicon thin‐film transistors

Hiroshi Takahashi; Yoshikazu Kojima

doi:10.1063/1.111641

Oxide‐semiconductor interface roughness and electrical properties of polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111641 ◽

1994 ◽

Vol 64 (17) ◽

pp. 2273-2275 ◽

Cited By ~ 8

Author(s):

Hiroshi Takahashi ◽

Yoshikazu Kojima

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Interface Roughness ◽

Oxide Semiconductor ◽

Silicon Thin Film ◽

Semiconductor Interface

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Effect of Dopant Concentration in Lightly Doped Drain Region on the Electrical Properties of N-Type Metal Induced Lateral Crystallization Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.10mc13 ◽

2013 ◽

Vol 52 (10S) ◽

pp. 10MC13 ◽

Cited By ~ 1

Author(s):

Se Wan Son ◽

Chang Woo Byun ◽

Yong Woo Lee ◽

Seung Jae Yun ◽

Ashkan Vakilipour Takaloo ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Dopant Concentration ◽

Silicon Thin Film ◽

Drain Region ◽

Lateral Crystallization ◽

Lightly Doped Drain

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The Electrical Properties of Unidirectional Metal-Induced Lateral Crystallized Polycrystalline-Silicon Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.896357 ◽

2007 ◽

Vol 54 (6) ◽

pp. 1420-1424 ◽

Cited By ~ 4

Author(s):

Nam-Kyu Song ◽

Min-Sun Kim ◽

Shin-Hee Han ◽

Young-Su Kim ◽

Seung-Ki Joo

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film

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Device Simulation of Grain Boundaries with Oxide-Silicon Interface Roughness in Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.l775 ◽

2000 ◽

Vol 39 (Part 2, No. 8A) ◽

pp. L775-L778 ◽

Cited By ~ 6

Author(s):

Mutsumi Kimura ◽

Tsukasa Eguchi ◽

Satoshi Inoue ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

Grain Boundaries ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Device Simulation ◽

Interface Roughness ◽

Silicon Thin Film ◽

Silicon Interface

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Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors

Journal of Applied Physics ◽

10.1063/1.1508421 ◽

2002 ◽

Vol 92 (8) ◽

pp. 4741-4745 ◽

Cited By ~ 10

Author(s):

N. A. Hastas ◽

C. A. Dimitriadis ◽

G. Kamarinos

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Interface Roughness ◽

Gate Bias ◽

Silicon Thin Film ◽

Bias Instability

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A High-Speed and Low-Power Inverter Circuit Using p-Channel Metal Oxide Semiconductor Low-Temperature Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.03b010 ◽

2009 ◽

Vol 48 (3) ◽

pp. 03B010 ◽

Cited By ~ 1

Author(s):

Seunghun Hong ◽

Jaehwan Kim ◽

Byong-Deok Choi

Keyword(s):

Thin Film ◽

Low Temperature ◽

Metal Oxide ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Speed ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film ◽

Inverter Circuit

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A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3173179 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024504 ◽

Cited By ~ 5

Author(s):

Kiran Sharma ◽

D. P. Joshi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Electrical Conduction ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film

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Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors

Journal of Applied Physics ◽

10.1063/1.371409 ◽

1999 ◽

Vol 86 (8) ◽

pp. 4600-4606 ◽

Cited By ~ 70

Author(s):

C. T. Angelis ◽

C. A. Dimitriadis ◽

M. Miyasaka ◽

F. V. Farmakis ◽

G. Kamarinos ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Structural And Electrical Properties

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Electrical Properties of High-κ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.853 ◽

2008 ◽

Vol 47 (2) ◽

pp. 853-856 ◽

Cited By ~ 1

Author(s):

Chih-Kang Deng ◽

Hong-Ren Chang ◽

Bi-Shiou Chiou

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Nitrogen Implantation ◽

Praseodymium Oxide ◽

Silicon Thin Film

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Development and electrical properties of undoped polycrystalline silicon thin-film transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.34270 ◽

1989 ◽

Vol 36 (9) ◽

pp. 1915-1922 ◽

Cited By ~ 205

Author(s):

R.E. Proano ◽

R.S. Misage ◽

D.G. Ast

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film

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Erratum: “Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors” [J. Appl. Phys. 86, 4600 (1999)]

Journal of Applied Physics ◽

10.1063/1.372060 ◽

2000 ◽

Vol 87 (3) ◽

pp. 1588-1588 ◽

Cited By ~ 2

Author(s):

C. T. Angelis ◽

C. A. Dimitriadis ◽

M. Miyasaka ◽

F. V. Farmakis ◽

G. Kamarinos ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Structural And Electrical Properties

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