A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Kiran Sharma; D. P. Joshi

doi:10.1063/1.3173179

A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3173179 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024504 ◽

Cited By ~ 5

Author(s):

Kiran Sharma ◽

D. P. Joshi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Electrical Conduction ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film

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A High-Speed and Low-Power Inverter Circuit Using p-Channel Metal Oxide Semiconductor Low-Temperature Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.03b010 ◽

2009 ◽

Vol 48 (3) ◽

pp. 03B010 ◽

Cited By ~ 1

Author(s):

Seunghun Hong ◽

Jaehwan Kim ◽

Byong-Deok Choi

Keyword(s):

Thin Film ◽

Low Temperature ◽

Metal Oxide ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Speed ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film ◽

Inverter Circuit

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Fabrication of n-channel metal–oxide–semiconductor field-effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphire

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585950 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2954

Author(s):

P. R. de la Houssaye

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Cited By ~ 3

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

20 Nm

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A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-kand Metal Gate on Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.3091 ◽

2008 ◽

Vol 47 (4) ◽

pp. 3091-3094 ◽

Cited By ~ 3

Author(s):

Soon-Young Oh ◽

Chang-Geun Ahn ◽

Jong-Heon Yang ◽

Won-Ju Cho ◽

Moon-Gyu Jang

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Polycrystalline Silicon ◽

Thin Film Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Silicon Thin Film

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Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6290 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6290-6294

Author(s):

Yasuhiro Sato ◽

Toshihiko Kosugi ◽

Toshiaki Tsuchiya ◽

Hiromu Ishii

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Drain Region ◽

Ultra Thin Film

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Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.10pb02 ◽

2011 ◽

Vol 50 (10S) ◽

pp. 10PB02 ◽

Cited By ~ 1

Author(s):

Takeo Matsuki ◽

Ranga Hettiarachchi ◽

Wei Feng ◽

Kenji Shiraishi ◽

Keisaku Yamada ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nitrogen Incorporation

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Effects Of Grain Boundaries On Channel Conduction In Thin Film Polysilicon On Silicon-Dioxide Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs)

10.1117/12.934956 ◽

1983 ◽

Cited By ~ 1

Author(s):

J. G. Fossum ◽

A. Ortiz ◽

H.-K Lim ◽

H.-W. Lam

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Silicon Dioxide ◽

Grain Boundaries ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Applied Physics Letters ◽

10.1063/1.1592634 ◽

2003 ◽

Vol 83 (2) ◽

pp. 308-310 ◽

Cited By ~ 27

Author(s):

C. W. Yang ◽

Y. K. Fang ◽

C. H. Chen ◽

S. F. Chen ◽

C. Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

High K ◽

Flatband Voltage ◽

P Type

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Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Cited By ~ 11

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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